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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFS17N20DTRLMOSFET N-CH 200V 16A D2PAK Infineon Technologies |
4,571 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF2807STRLMOSFET N-CH 75V 82A D2PAK Infineon Technologies |
2,630 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3820 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF540ZMOSFET N-CH 100V 36A TO220AB Infineon Technologies |
4,050 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPP024N06N3GHKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
2,277 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275 nC @ 10 V | ±20V | 23000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
BSZ0602LSATMA1MOSFET N-CH 80V 13A/40A TSDSON Infineon Technologies |
3,330 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 40A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.3V @ 36µA | 18 nC @ 4.5 V | ±20V | 2340 pF @ 40 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IRFR18N15DMOSFET N-CH 150V 18A DPAK Infineon Technologies |
2,678 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7451MOSFET N-CH 150V 3.6A 8SO Infineon Technologies |
2,955 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41 nC @ 10 V | ±30V | 990 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRLZ24NSMOSFET N-CH 55V 18A D2PAK Infineon Technologies |
2,047 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRLZ24NLMOSFET N-CH 55V 18A TO262 Infineon Technologies |
3,488 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF6609MOSFET N-CH 20V 31A DIRECTFET Infineon Technologies |
2,654 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 31A, 10V | 2.45V @ 250µA | 69 nC @ 4.5 V | ±20V | 6290 pF @ 10 V | - | 1.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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