制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF6678MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
3,627 | - |
|
![]() Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
![]() |
SPB100N03S2L-03MOSFET N-CH 30V 100A TO263-3 Infineon Technologies |
2,419 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 220 nC @ 10 V | ±20V | 8180 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
![]() |
IRF7492TRPBFMOSFET N-CH 200V 3.7A 8SO Infineon Technologies |
4,011 | - |
|
![]() Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
![]() |
IRFH5406TRPBFMOSFET N-CH 60V 11A/40A 8PQFN Infineon Technologies |
4,619 | - |
|
![]() Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 40A (Tc) | 10V | 14.4mOhm @ 24A, 10V | 4V @ 50µA | 35 nC @ 10 V | ±20V | 1256 pF @ 25 V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
![]() |
IRF6613TR1MOSFET N-CH 40V 23A DIRECTFET Infineon Technologies |
3,677 | - |
|
![]() Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | ±20V | 5950 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
![]() |
IRF1010EZSTRLPMOSFET N-CH 60V 75A D2PAK Infineon Technologies |
3,550 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
SPP100N03S2L-03MOSFET N-CH 30V 100A TO220-3 Infineon Technologies |
3,516 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 220 nC @ 10 V | ±20V | 8180 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
![]() |
IRF7492TRMOSFET N-CH 200V 3.7A 8SO Infineon Technologies |
3,878 | - |
|
![]() Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
![]() |
IRF3711STRRMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
2,304 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IRF3711STRLMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
4,830 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |