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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFZ44ESTRRMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
4,260 |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFZ44ESTRLMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
4,580 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF7433MOSFET P-CH 12V 8.9A 8SO Infineon Technologies |
4,968 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20 nC @ 4.5 V | ±8V | 1877 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF3709SMOSFET N-CH 30V 90A D2PAK Infineon Technologies |
2,239 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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IRL2203NSTRRPBFMOSFET N-CH 30V 116A D2PAK Infineon Technologies |
4,756 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR3910CPBFMOSFET N-CH 100V 16A DPAK Infineon Technologies |
2,893 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF6665TR1MOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
3,987 |
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Tabla de datos |
- | DirectFET™ Isometric SH | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
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IPB80P03P4L07ATMA1MOSFET P-CH 30V 80A TO263-3 Infineon Technologies |
4,951 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA65R280C6XKSA1MOSFET N-CH 650V 13.8A TO220 Infineon Technologies |
4,609 |
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Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
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IPP80R360P7XKSA1MOSFET N-CH 800V 13A TO220-3 Infineon Technologies |
2,171 |
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Tabla de datos |
CoolMOS™ P7 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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