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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP298H6327XUSA1MOSFET N-CH 400V 500MA SOT223-4 Infineon Technologies |
2,950 |
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Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 500mA (Ta) | 10V | 3Ohm @ 500mA, 10V | 4V @ 1mA | - | ±20V | 400 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
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BSP299H6327XUSA1MOSFET N-CH 500V 400MA SOT223-4 Infineon Technologies |
4,380 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IRFU6215MOSFET P-CH 150V 13A IPAK Infineon Technologies |
3,672 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
IRF1404ZSTRRPBFMOSFET N-CH 40V 180A D2PAK Infineon Technologies |
3,398 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 150µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF3707ZCSTRRMOSFET N-CH 30V 59A D2PAK Infineon Technologies |
4,050 |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 250µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF6617TR1MOSFET N-CH 30V 14A DIRECTFET Infineon Technologies |
4,106 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
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IRL3705NLPBFMOSFET N-CH 55V 89A TO262 Infineon Technologies |
3,379 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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BSB165N15NZ3GXUMA2TRENCH >=100V Infineon Technologies |
3,757 |
|
Tabla de datos |
- | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | ±20V | 2800 pF @ 75 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-9 |
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BSB165N15NZ3GXUMA3TRENCH >=100V Infineon Technologies |
3,047 |
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Tabla de datos |
- | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | ±20V | 2800 pF @ 75 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-9 |
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IPL65R340CFDAUMA2MOSFET N-CH 650V 10.9A 4VSON Infineon Technologies |
4,967 |
|
Tabla de datos |
CoolMOS™ CFD2 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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