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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP070N06N GMOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
3,608 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 180µA | 118 nC @ 10 V | ±20V | 4100 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRF6636MOSFET N-CH 20V 18A DIRECTFET Infineon Technologies |
2,497 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2420 pF @ 10 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
|
BSZ100N03LSGATMA1MOSFET N-CH 30V 12A/40A 8TSDSON Infineon Technologies |
2,728 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2.2V @ 250µA | 17 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
|
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IRFH4226TRPBFMOSFET N-CH 25V 30A/70A 8PQFN Infineon Technologies |
4,285 |
|
Tabla de datos |
FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 2.4mOhm @ 30A, 10V | 2.1V @ 50µA | 32 nC @ 10 V | ±20V | 2000 pF @ 13 V | - | 3.4W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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BSP129H6906XTSA1MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
3,285 |
|
Tabla de datos |
SIPMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7 nC @ 5 V | ±20V | 108 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSZ0702LSATMA1MOSFET N-CH 60V 17A/40A TSDSON Infineon Technologies |
4,572 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 36µA | 22 nC @ 4.5 V | ±20V | 3100 pF @ 30 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IQE057N10NM6CGATMA1TRENCH >=100V Infineon Technologies |
3,490 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRFR4104TRLMOSFET N-CH 40V 42A DPAK Infineon Technologies |
3,638 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | - | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | - | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
AUIRLR2905ZTRLMOSFET N-CH 55V 42A DPAK Infineon Technologies |
4,126 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | - | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IPP100P03P3L-04MOSFET P-CH 30V 100A TO220-3 Infineon Technologies |
4,716 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | 2.1V @ 475µA | 200 nC @ 10 V | +5V, -16V | 9300 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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