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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF3707ZCSMOSFET N-CH 30V 59A D2PAK Infineon Technologies |
4,227 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 250µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IQE057N10NM6ATMA1TRENCH >=100V Infineon Technologies |
2,228 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPI12CN10N GMOSFET N-CH 100V 67A TO262-3 Infineon Technologies |
2,463 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4320 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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BTS247Z E3062AMOSFET N-CH 55V 33A TO263-5 Infineon Technologies |
3,629 |
|
Tabla de datos |
TEMPFET® | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | ±20V | 1730 pF @ 25 V | Temperature Sensing Diode | 120W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-5-2 |
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IRFU4105ZMOSFET N-CH 55V 30A IPAK Infineon Technologies |
3,886 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
IRLU4343MOSFET N-CH 55V 26A I-PAK Infineon Technologies |
3,167 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRFR3504ZTRMOSFET N-CH 40V 42A DPAK Infineon Technologies |
2,391 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR3504ZTRLMOSFET N-CH 40V 42A DPAK Infineon Technologies |
3,419 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRL530NSTRLMOSFET N-CH 100V 17A D2PAK Infineon Technologies |
2,886 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±20V | 800 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL530NSTRRMOSFET N-CH 100V 17A D2PAK Infineon Technologies |
3,467 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±20V | 800 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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