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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP296L6327HTSA1MOSFET N-CH 100V 1.1A SOT223-4 Infineon Technologies |
3,986 |
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Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | ±20V | 364 pF @ 25 V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP373L6327HTSA1MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies |
2,377 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Ta) | 10V | 300mOhm @ 1.7A, 10V | 4V @ 1mA | - | ±20V | 550 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IPD25CN10NGBUMA1MOSFET N-CH 100V 35A TO252-3 Infineon Technologies |
4,712 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31 nC @ 10 V | ±20V | 2070 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRF7821GTRPBFMOSFET N-CH 30V 13.6A 8SO Infineon Technologies |
4,340 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFHM4231TRPBFMOSFET N-CH 25V 40A 8PQFN Infineon Technologies |
3,436 |
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Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.1V @ 35µA | 20 nC @ 10 V | ±20V | 1270 pF @ 13 V | - | 2.7W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3x3) |
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ISZ0501NLSATMA125V, N-CH MOSFET, LOGIC LEVEL, P Infineon Technologies |
3,908 |
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Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | 2V @ 250µA | 13.6 nC @ 10 V | ±16V | 910 pF @ 12 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-25 |
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IRFR5410TRMOSFET P-CH 100V 13A DPAK Infineon Technologies |
4,329 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC019N02KSGAUMA1MOSFET N-CH 20V 30A/100A TDSON Infineon Technologies |
3,883 |
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Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Ta), 100A (Tc) | 2.5V, 4.5V | 1.95mOhm @ 50A, 4.5V | 1.2V @ 350µA | 85 nC @ 4.5 V | ±12V | 13000 pF @ 10 V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPA90R1K2C3XKSA2MOSFET N-CH 900V 5.1A TO220 Infineon Technologies |
2,489 |
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Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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SPB80N06S2-09MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,873 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | 4V @ 125µA | 80 nC @ 10 V | ±20V | 3140 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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