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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFZ44VZPBFMOSFET N-CH 60V 57A TO220AB Infineon Technologies |
2,368 |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFR3303TRPBFMOSFET N-CH 30V 33A DPAK Infineon Technologies |
4,378 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7204TRPBFMOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
4,330 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±12V | 860 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRLR2905ZTRLPBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
2,581 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | ±16V | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC883N03LSGATMA1MOSFET N-CH 34V 17A/98A TDSON Infineon Technologies |
3,364 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | 17A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 34 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IRFHM831TRPBFMOSFET N-CH 30V 14A/40A PQFN Infineon Technologies |
2,298 |
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Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 7.8mOhm @ 12A, 10V | 2.35V @ 25µA | 16 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (3x3) |
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IRFHS9301TR2PBFMOSFET P-CH 30V 6A PQFN Infineon Technologies |
3,257 |
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Tabla de datos |
- | 6-PowerVDFN | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta), 13A (Tc) | - | 37mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13 nC @ 10 V | - | 580 pF @ 25 V | - | - | - | - | - | Surface Mount | 6-PQFN (2x2) |
|
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IPD60R460CEATMA1MOSFET N-CH 600V 9.1A TO252-3 Infineon Technologies |
2,685 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.1A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 74W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRLZ24NSTRRMOSFET N-CH 55V 18A D2PAK Infineon Technologies |
4,892 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF520NSMOSFET N-CH 100V 9.7A D2PAK Infineon Technologies |
3,687 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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