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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR13N20DTRLMOSFET N-CH 200V 13A DPAK Infineon Technologies |
2,584 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38 nC @ 10 V | ±30V | 830 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BUZ31 E3046MOSFET N-CH 200V 14.5A TO262-3 Infineon Technologies |
3,915 |
|
Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPP90R1K2C3XKSA2MOSFET N-CH 900V 5.1A TO220-3 Infineon Technologies |
3,178 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPP80R600P7XKSA1MOSFET N-CH 800V 8A TO220-3 Infineon Technologies |
4,223 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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AUIRFS3306MOSFET N-CH 60V 120A D2PAK Infineon Technologies |
2,092 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 125 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPA060N06NM5SXKSA1MOSFET N-CH 60V 56A TO220 Infineon Technologies |
4,421 |
|
Tabla de datos |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 6V, 10V | 6mOhm @ 56A, 10V | 3.3V @ 36µA | 36 nC @ 10 V | ±20V | 2600 pF @ 30 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IRF7811AVTRPBFMOSFET N-CH 30V 10.8A 8SO Infineon Technologies |
2,861 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10.8A (Ta) | 4.5V | 14mOhm @ 15A, 4.5V | 3V @ 250µA | 26 nC @ 5 V | ±20V | 1801 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7233TRPBFMOSFET P-CH 12V 9.5A 8SO Infineon Technologies |
3,833 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA (Min) | 74 nC @ 5 V | ±12V | 6000 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7410GTRPBFMOSFET P-CH 12V 16A 8SO Infineon Technologies |
3,567 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91 nC @ 4.5 V | ±8V | 8676 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRLR8726TRLPBFMOSFET N-CH 30V 86A DPAK Infineon Technologies |
2,999 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23 nC @ 4.5 V | ±20V | 2150 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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