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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF5803D2TRPBFMOSFET P-CH 40V 3.4A 8SO Infineon Technologies |
4,399 |
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Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSO080P03NS3EGXUMA1MOSFET P-CH 30V 12A 8DSO Infineon Technologies |
4,249 |
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Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 6V, 10V | 8mOhm @ 14.8A, 10V | 3.1V @ 150µA | 81 nC @ 10 V | ±25V | 6750 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRF7413ZGTRPBFMOSFET N-CH 30V 13A 8SO Infineon Technologies |
4,551 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 25µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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AUIRFS3307ZMOSFET N-CH 75V 120A D2PAK Infineon Technologies |
2,192 |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±20V | 4750 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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SPP47N10LMOSFET N-CH 100V 47A TO220-3 Infineon Technologies |
2,648 |
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Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRFR2905ZTRMOSFET N-CH 55V 42A DPAK Infineon Technologies |
4,665 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44 nC @ 10 V | - | 1380 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-252AA (DPAK) |
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IPD50N10S3L16ATMA2MOSFET_(75V 120V( Infineon Technologies |
4,479 |
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Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IRF7321D2TRMOSFET P-CH 30V 4.7A 8SO Infineon Technologies |
2,751 |
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Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34 nC @ 10 V | ±20V | 710 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6614MOSFET N-CH 40V 12.7A DIRECTFET Infineon Technologies |
4,853 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29 nC @ 4.5 V | ±20V | 2560 pF @ 20 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
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IRF9Z24NSTRLMOSFET P-CH 55V 12A D2PAK Infineon Technologies |
3,235 |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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