制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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SPP80N06S2L-11MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
2,909 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2650 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPD85P04P4L06ATMA1MOSFET P-CH 40V 85A TO252-3 Infineon Technologies |
3,621 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 85A (Tc) | 4.5V, 10V | 6.4mOhm @ 85A, 10V | 2.2V @ 150µA | 104 nC @ 10 V | ±16V | 6580 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IRFU5505MOSFET P-CH 55V 18A IPAK Infineon Technologies |
2,433 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFZ44VZSTRRPBFMOSFET N-CH 60V 57A D2PAK Infineon Technologies |
3,012 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IAUC100N08S5N034ATMA1MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies |
4,524 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 132A (Tj) | 6V, 10V | 3.4mOhm @ 50A, 10V | 3.8V @ 78µA | 66 nC @ 10 V | ±20V | 4559 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
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IRLR4343TRMOSFET N-CH 55V 26A DPAK Infineon Technologies |
3,217 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7413TRPBFMOSFET N-CH 30V 13A 8SO Infineon Technologies |
4,047 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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SPD01N60C3BTMA1MOSFET N-CH 650V 800MA TO252-3 Infineon Technologies |
4,764 | - |
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CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | 3.9V @ 250µA | 5 nC @ 10 V | ±20V | 100 pF @ 25 V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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BSC050N03MSGATMA1MOSFET N-CH 30V 16A/80A TDSON Infineon Technologies |
3,085 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 80A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2V @ 250µA | 46 nC @ 10 V | ±20V | 3600 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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IRLR8721TRPBFMOSFET N-CH 30V 65A DPAK Infineon Technologies |
3,752 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13 nC @ 4.5 V | ±20V | 1030 pF @ 15 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |