制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFR4105TRMOSFET N-CH 55V 27A DPAK Infineon Technologies |
3,904 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFR5305TRLMOSFET P-CH 55V 31A DPAK Infineon Technologies |
4,764 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF3707ZCSTRRPMOSFET N-CH 30V 59A D2PAK Infineon Technologies |
4,132 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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BUZ32MOSFET N-CH 200V 9.5A TO220-3 Infineon Technologies |
4,143 | - |
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SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF7807MOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
3,258 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSZ0704LSATMA1MOSFET N-CH 60V 11A/40A TSDSON Infineon Technologies |
2,813 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 9.9mOhm @ 20A, 10V | 2.3V @ 14µA | 8.6 nC @ 4.5 V | ±20V | 1300 pF @ 30 V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
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BSC0704LSATMA1MOSFET N-CH 60V 11A/47A TDSON Infineon Technologies |
4,046 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 47A (Tc) | 4.5V, 10V | 9.4mOhm @ 24A, 10V | 2.3V @ 14µA | 9.4 nC @ 4.5 V | ±20V | 1300 pF @ 30 V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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IRF7726MOSFET P-CH 30V 7A MICRO8 Infineon Technologies |
2,661 | - |
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HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | 2.5V @ 250µA | 69 nC @ 10 V | ±20V | 2204 pF @ 25 V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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IPB04N03LAMOSFET N-CH 25V 80A TO263-3 Infineon Technologies |
3,655 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 55A, 10V | 2V @ 60µA | 32 nC @ 5 V | ±20V | 3877 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPP77N06S2-12MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
4,975 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |