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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH7921TRPBFMOSFET N-CH 30V 15A/34A PQFN Infineon Technologies |
4,155 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 2.35V @ 25µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
|
BSC889N03LSGATMA1MOSFET N-CH 30V 13A/45A TDSON Infineon Technologies |
2,132 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 45A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 16 nC @ 10 V | ±20V | 1300 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
IRFH5303TR2PBFMOSFET N-CH 30V 23A/82A 8PQFN Infineon Technologies |
4,041 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 82A (Tc) | 4.5V, 10V | 4.2mOhm @ 49A, 10V | 2.35V @ 50µA | 41 nC @ 10 V | ±20V | 2190 pF @ 15 V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRFH7936TRPBFMOSFET N-CH 30V 20A/54A 8PQFN Infineon Technologies |
2,366 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.35V @ 50µA | 26 nC @ 4.5 V | ±20V | 2360 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRFR9014NMOSFET P-CH 60V 5.1A DPAK Infineon Technologies |
2,320 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
SPD06N60C3ATMA1MOSFET N-CH 600V 6.2A TO252-3 Infineon Technologies |
4,008 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRF5803D2TRMOSFET P-CH 40V 3.4A 8SO Infineon Technologies |
4,271 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
AUIRFR3504TRLMOSFET N-CH 40V 56A DPAK Infineon Technologies |
3,065 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRLR3715TRMOSFET N-CH 20V 54A DPAK Infineon Technologies |
2,799 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17 nC @ 4.5 V | ±20V | 1060 pF @ 10 V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSP171PL6327HTSA1MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
3,364 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20 nC @ 10 V | ±20V | 460 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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