制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRFR2407MOSFET N-CH 75V 42A DPAK Infineon Technologies |
4,408 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC037N025S GMOSFET N-CH 25V 21A/100A TDSON Infineon Technologies |
3,841 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3.7mOhm @ 50A, 10V | 2V @ 50µA | 29 nC @ 5 V | ±20V | 3660 pF @ 15 V | - | 2.8W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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BSZ165N04NSGATMA1MOSFET N-CH 40V 8.9A/31A TSDSON Infineon Technologies |
4,403 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 8.9A (Ta), 31A (Tc) | 10V | 16.5mOhm @ 20A, 10V | 4V @ 10µA | 10 nC @ 10 V | ±20V | 840 pF @ 20 V | - | 2.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
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BSS139H6906XTSA1MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
2,502 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 250 V | 100mA (Ta) | 0V, 10V | 14Ohm @ 100mA, 10V | 1V @ 56µA | 3.5 nC @ 5 V | ±20V | 76 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
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IRFR4105TRLMOSFET N-CH 55V 27A DPAK Infineon Technologies |
4,068 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7413ZTRMOSFET N-CH 30V 13A 8SO Infineon Technologies |
3,266 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 250µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSG0812NDATMA1MOSFET N-CH 8TISON Infineon Technologies |
3,977 | - |
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* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRLU3714MOSFET N-CH 20V 36A I-PAK Infineon Technologies |
3,250 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7 nC @ 4.5 V | ±20V | 670 pF @ 10 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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SPB77N06S2-12MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
4,279 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPD400N06NGBTMA1MOSFET N-CH 60V 27A TO252-3 Infineon Technologies |
2,684 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Tc) | 10V | 40mOhm @ 27A, 10V | 4V @ 28µA | 17 nC @ 10 V | ±20V | 650 pF @ 30 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |