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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR120ZTRMOSFET N-CH 100V 8.7A DPAK Infineon Technologies |
4,001 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
SPP04N60S5BKSA1MOSFET N-CH 600V 4.5A TO220-3 Infineon Technologies |
4,647 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPB80N06S2L-11MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,244 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2650 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRLU7843PBFMOSFET N-CH 30V 161A IPAK Infineon Technologies |
3,818 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IPD60R800CEATMA1MOSFET N-CH 600V 5.6A TO252-3 Infineon Technologies |
2,249 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 48W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRFZ34NLPBFMOSFET N-CH 55V 29A TO262 Infineon Technologies |
3,326 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPP057N06N3GHKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
3,696 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82 nC @ 10 V | ±20V | 6600 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP052N06L3GHKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
3,779 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2.2V @ 58µA | 50 nC @ 4.5 V | ±20V | 8400 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF7465MOSFET N-CH 150V 1.9A 8SO Infineon Technologies |
2,122 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 1.9A (Ta) | 10V | 280mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15 nC @ 10 V | ±30V | 330 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF7521D1MOSFET N-CH 20V 2.4A MICRO8 Infineon Technologies |
2,661 |
|
Tabla de datos |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA (Min) | 8 nC @ 4.5 V | ±12V | 260 pF @ 15 V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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