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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB120N06N GMOSFET N-CH 60V 75A D2PAK Infineon Technologies |
3,738 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 11.7mOhm @ 75A, 10V | 4V @ 94µA | 62 nC @ 10 V | ±20V | 2100 pF @ 30 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF7663TRPBFMOSFET P-CH 20V 8.2A MICRO8 Infineon Technologies |
2,122 |
|
Tabla de datos |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45 nC @ 5 V | ±12V | 2520 pF @ 10 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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IRFHS8242TR2PBFMOSFET N-CH 25V 9.9A PQFN Infineon Technologies |
2,963 |
|
Tabla de datos |
- | 6-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 9.9A (Ta), 21A (Tc) | - | 13mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4 nC @ 10 V | - | 653 pF @ 10 V | - | - | - | - | - | Surface Mount | 6-PQFN (2x2) |
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IRFU9024NMOSFET P-CH 55V 11A IPAK Infineon Technologies |
2,048 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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SPP73N03S2L08XKMOSFET N-CH 30V 73A TO220-3 Infineon Technologies |
2,730 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 73A (Tc) | 4.5V, 10V | 8.4mOhm @ 36A, 10V | 2V @ 55µA | 46.2 nC @ 10 V | ±20V | 1710 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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64-4051MOSFET N-CH 55V 16A DPAK Infineon Technologies |
4,269 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRFR3704ZCPBFMOSFET N-CH 20V 60A DPAK Infineon Technologies |
2,668 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Ta) | - | 8.4mOhm @ 15A, 10V | - | 14 nC @ 4.5 V | - | 1190 pF @ 10 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFHM8330TRPBFMOSFET N-CH 30V 16A 8PQFN Infineon Technologies |
4,772 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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SPB80N03S2L-06 GMOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
3,397 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 5.9mOhm @ 80A, 10V | 2V @ 80µA | 68 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
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IRFR3303TRLMOSFET N-CH 30V 33A DPAK Infineon Technologies |
2,635 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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