制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPA80R650CEXKSA2MOSFET N-CH 800V 8A TO220-3F Infineon Technologies |
153 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Ta) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 45 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3F |
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IRFS7537TRLPBFMOSFET N-CH 60V 173A D2PAK Infineon Technologies |
860 | - |
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPP65R190CFD7AAKSA1MOSFET N-CH 650V 14A TO220-3 Infineon Technologies |
688 | - |
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CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | - | 190mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1291 pF @ 400 V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3 |
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BSZ0500NSIATMA1MOSFET N-CH 30V 30A/40A TSDSON Infineon Technologies |
9,817 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 40A (Tc) | 4.5V, 10V | 1.5mOhm @ 20A, 10V | 2V @ 250µA | 52 nC @ 10 V | ±20V | 3400 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IPP032N06N3GXKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
1,626 | - |
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OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IQE006NE2LM5CGATMA1MOSFET N-CH 25V 41A/298A PQFN Infineon Technologies |
9,485 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 41A (Ta), 298A (Tc) | - | 0.65mOhm @ 20A, 10V | 2V @ 250µA | 82.1 nC @ 10 V | ±16V | 5453 pF @ 12 V | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TTFN-9-1 |
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IPA60R180P7XKSA1MOSFET N-CHANNEL 650V 18A TO220 Infineon Technologies |
696 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPP040N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
729 | - |
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StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta), 115A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP60R280CFD7XKSA1MOSFET N-CH 650V 9A TO220-3 Infineon Technologies |
500 | - |
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CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRL7486MTRPBFMOSFET N-CH 40V 209A DIRECTFET Infineon Technologies |
4,347 | - |
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HEXFET®, StrongIRFET™ | DirectFET™ Isometric ME | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 209A (Tc) | 4.5V, 10V | 1.25mOhm @ 123A, 10V | 2.5V @ 150µA | 111 nC @ 4.5 V | ±20V | 6904 pF @ 25 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |