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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPA07N60C3XKSA1MOSFET N-CH 650V 7.3A TO220-FP Infineon Technologies |
461 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 250µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IQE008N03LM5CGATMA1TRENCH <= 40V PG-TTFN-9 Infineon Technologies |
5,007 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 253A (Tc) | 4.5V, 10V | 0.85mOhm @ 20A, 10V | 2V @ 250µA | 64 nC @ 10 V | ±16V | 5700 pF @ 15 V | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TTFN-9-1 |
|
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IQE008N03LM5ATMA1TRENCH <= 40V PG-TSON-8 Infineon Technologies |
1,799 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 253A (Tc) | 4.5V, 10V | 0.85mOhm @ 20A, 10V | 2V @ 250µA | 64 nC @ 10 V | ±16V | 5700 pF @ 15 V | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-4 |
|
SPD50P03LGBTMA1MOSFET P-CH 30V 50A TO252-5 Infineon Technologies |
2,985 |
|
Tabla de datos |
OptiMOS™ | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 10V | 7mOhm @ 50A, 10V | 2V @ 250µA | 126 nC @ 10 V | ±20V | 6880 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-5 |
|
IAUA200N04S5N010AUMA1MOSFET N-CH 40V 200A 5HSOF Infineon Technologies |
3,486 |
|
Tabla de datos |
OptiMOS™ 5 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 7V, 10V | 1mOhm @ 100A, 10V | 3.4V @ 100µA | 132 nC @ 10 V | ±20V | 7650 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-5-1 |
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IRF2204PBFMOSFET N-CH 40V 210A TO220AB Infineon Technologies |
1,507 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 210A (Tc) | 10V | 3.6mOhm @ 130A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 5890 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPP60R190C6XKSA1MOSFET N-CH 600V 20.2A TO220-3 Infineon Technologies |
3,682 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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IPP60R190E6XKSA1MOSFET N-CH 600V 20.2A TO220-3 Infineon Technologies |
1,953 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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BSC005N03LS5IATMA1TRENCH <= 40V Infineon Technologies |
4,808 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Ta), 433A (Tc) | 4.5V, 10V | 0.55mOhm @ 50A, 10V | 2V @ 10mA | 128 nC @ 10 V | ±20V | 8000 pF @ 15 V | - | 3W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
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IRL1404ZPBFMOSFET N-CH 40V 75A TO220AB Infineon Technologies |
1,626 |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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