制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRFS3806MOSFET N-CH 60V 43A D2PAK Infineon Technologies |
2,817 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPP80N04S303AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
4,284 | - |
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OptiMOS™ T | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 120µA | 110 nC @ 10 V | ±20V | 7300 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP08CNE8NGN-CHANNEL POWER MOSFET Infineon Technologies |
425 | - |
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OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 85 V | 95A (Tc) | 10V | 6.4mOhm @ 95A, 10V | 4V @ 130µA | 99 nC @ 10 V | ±20V | 6690 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BSC079N03SGMOSFET N-CH 30V 14.6A/40A TDSON Infineon Technologies |
634 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.6A (Ta), 40A (Tc) | 4.5V, 10V | 7.9mOhm @ 40A, 10V | 2V @ 30µA | 17 nC @ 5 V | ±20V | 2230 pF @ 15 V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPI147N12N3GAKSA1MOSFET N-CH 120V 56A TO262-3 Infineon Technologies |
4,288 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 14.7mOhm @ 56A, 10V | 4V @ 61µA | 49 nC @ 10 V | ±20V | 3220 pF @ 60 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI100N06S3L04XKMOSFET N-CH 55V 100A TO262-3 Infineon Technologies |
72 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 5V, 10V | 3.8mOhm @ 80A, 10V | 2.2V @ 150µA | 362 nC @ 10 V | ±16V | 17270 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IRFSL7762PBFMOSFET N-CH 75V 85A TO262 Infineon Technologies |
54 | - |
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HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4440 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPAW60R360P7SXKSA1MOSFET N-CH 650V 9A TO220 Infineon Technologies |
34 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±30V | 555 pF @ 400 V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IRFR3711ZTRPBFMOSFET N-CH 20V 93A DPAK Infineon Technologies |
26 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2160 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF540ZLPBFMOSFET N-CH 100V 36A TO262 Infineon Technologies |
48 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |