制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF7821TRPBFMOSFET N-CH 30V 13.6A 8SO Infineon Technologies |
4,941 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF540ZPBFMOSFET N-CH 100V 36A TO220AB Infineon Technologies |
3,167 | - |
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HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRLR2908TRPBFMOSFET N-CH 80V 30A DPAK Infineon Technologies |
4,565 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33 nC @ 4.5 V | ±16V | 1890 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRLR3705ZTRPBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
3,196 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | ±16V | 2900 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC050N10NS5ATMA1MOSFET N-CH 100V 16A/100A TDSON Infineon Technologies |
2,483 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Ta), 100A (Tc) | 6V, 10V | 5mOhm @ 50A, 10V | 3.8V @ 72µA | 61 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
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BSC110N15NS5ATMA1MOSFET N-CH 150V 76A TDSON Infineon Technologies |
3,907 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 76A (Tc) | 8V, 10V | 11mOhm @ 38A, 10V | 4.6V @ 91µA | 35 nC @ 10 V | ±20V | 2770 pF @ 75 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
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IRLB3036PBFMOSFET N-CH 60V 195A TO220AB Infineon Technologies |
3,835 | - |
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HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFP90N20DPBFMOSFET N-CH 200V 94A TO247AC Infineon Technologies |
2,012 | - |
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HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 94A (Tc) | 10V | 23mOhm @ 56A, 10V | 5V @ 250µA | 270 nC @ 10 V | ±30V | 6040 pF @ 25 V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPTC044N15NM5ATMA1OPTIMOS 5 POWER MOSFET Infineon Technologies |
11 | - |
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OptiMOS™ 5 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 19.4A (Ta), 174A (Tc) | 8V, 10V | 4.4mOhm @ 50A, 10V | 4.6V @ 235µA | 89 nC @ 10 V | ±20V | 7000 pF @ 75 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
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IPT039N15N5ATMA1OPTIMOS 5 POWER MOSFET Infineon Technologies |
2,975 | - |
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OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Ta), 190A (Tc) | 8V, 10V | 3.9mOhm @ 50A, 10V | 4.6V @ 257µA | 98 nC @ 10 V | ±20V | 7700 pF @ 75 V | - | 3.8W (Ta), 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8 |