Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPB42N03S2L-13MOSFET N-CH 30V 42A TO263-3 Infineon Technologies |
83 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5 nC @ 10 V | ±20V | 1130 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPAN60R650CEXKSA1MOSFET N-CH 600V 9.9A TO220 Infineon Technologies |
3,616 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPP139N08N3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
632 |
|
Tabla de datos |
OptiMOS™ 3 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A (Tc) | 6V, 10V | 13.9mOhm @ 45A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP80N04S306AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
2,053 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 52µA | 47 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP47N10SL26AKSA1MOSFET N-CH 100V 47A TO220-3 Infineon Technologies |
4,128 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPA093N06N3GXKSA1MOSFET N-CH 60V 43A TO220-3-31 Infineon Technologies |
3,477 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 9.3mOhm @ 40A, 10V | 4V @ 34µA | 48 nC @ 10 V | ±20V | 3900 pF @ 30 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
AUIRFB3806MOSFET N-CH 60V 43A TO220AB Infineon Technologies |
3,001 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPP60R600CPN-CHANNEL POWER MOSFET Infineon Technologies |
1,000 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27 nC @ 10 V | ±20V | 550 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPB60R600CPN-CHANNEL POWER MOSFET Infineon Technologies |
970 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27 nC @ 10 V | ±20V | 550 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPI126N10N3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
456 |
|
Tabla de datos |
OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 58A (Tc) | 6V, 10V | 12.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
