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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPTC014N10NM5ATMA1OPTIMOS 5 POWER MOSFET Infineon Technologies |
2,058 |
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Tabla de datos |
OptiMOS™ 5 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Ta), 365A (Tc) | 6V, 10V | 1.4mOhm @ 150A, 10V | 3.8V @ 280µA | 211 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
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IPW60R070C6FKSA1MOSFET N-CH 600V 53A TO247-3 Infineon Technologies |
4,056 |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 170 nC @ 10 V | ±20V | 3800 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IMZA65R020M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
4,073 |
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Tabla de datos |
CoolSiC™ Gen 2 | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 83A (Tc) | 15V, 20V | 18mOhm @ 46.9A, 20V | 5.6V @ 9.5mA | 57 nC @ 18 V | +23V, -7V | 2038 pF @ 400 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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IMBG65R007M2HXTMA1SICFET N-CH 650V 238A TO263-7 Infineon Technologies |
2,052 |
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Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 238A (Tc) | 15V, 20V | 8.5mOhm @ 146.3A, 18V | 5.6V @ 2.97mA | 179 nC @ 18 V | +23V, -7V | 6359 pF @ 400 V | - | 789W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IMZA65R007M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
3,160 |
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Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 210A (Tc) | 15V, 20V | 6.1mOhm @ 146.3A, 20V | 5.6V @ 29.7mA | 179 nC @ 18 V | +23V, -7V | 6359 pF @ 400 V | - | 625W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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IRFU024NPBFAKLA1MOSFET N-CH Infineon Technologies |
4,897 |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 370 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IAUCN04S7L005ATMA1MOSFET_(20V 40V) Infineon Technologies |
3,007 |
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Tabla de datos |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 430A (Tj) | 4.5V, 10V | 0.52mOhm @ 88A, 10V | 1.8V @ 95µA | 141 nC @ 10 V | ±16V | 9415 pF @ 20 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-43 |
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IPU80R600P7AKMA1MOSFET N-CH 800V 8A TO251-3 Infineon Technologies |
2,481 |
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Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IRL3705NPBFMOSFET N-CH 55V 89A TO220AB Infineon Technologies |
3,227 |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SPP11N60C3XKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
4 |
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Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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