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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF4905SMOSFET P-CH 55V 42A D2PAK Infineon Technologies |
3,073 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPB018N10N5ATMA1TRENCH >=100V Infineon Technologies |
294 |
|
Tabla de datos |
OptiMOS™ 5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta), 176A (Tc) | 6V, 10V | 1.83mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPTC012N08NM5ATMA1MOSFET N-CH 80V 40A/396A HDSOP Infineon Technologies |
186 |
|
Tabla de datos |
OptiMOS™ 5 | 16-PowerSOP Module | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 40A (Ta), 396A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 219 nC @ 10 V | ±20V | 16000 pF @ 40 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
|
AUIRF2804LMOSFET N-CH 40V 195A TO262 Infineon Technologies |
959 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
AUIRFB8409MOSFET N-CH 40V 195A TO220AB Infineon Technologies |
1,986 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
AUIRF1324WLMOSFET N-CH 24V 240A TO262-3 Infineon Technologies |
986 |
|
Tabla de datos |
HEXFET® | TO-262-3 Wide Leads | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 24 V | 240A (Tc) | 10V | 1.3mOhm @ 195A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 7630 pF @ 19 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262-3 Wide |
|
IPW60R075CPAFKSA1AUTOMOTIVE Infineon Technologies |
174 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.74mA | 116 nC @ 10 V | ±20V | 4000 pF @ 100 V | - | 313W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
|
BTS240AHKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
12,772 |
|
Tabla de datos |
- | TO-218-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 58A (Tc) | 10V | 18mOhm @ 47A, 10V | 3.5V @ 1mA | - | ±20V | 4300 pF @ 25 V | - | 170W | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO218-3-1 |
|
AUIRFS8409-7PMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
300 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
|
IGO60R070D1AUMA2GAN HV Infineon Technologies |
785 |
|
Tabla de datos |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-85 |
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