Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BTS244ZE3062AATMA2MOSFET N-CH 55V 35A TO263-5 Infineon Technologies |
5 |
|
Tabla de datos |
TEMPFET® | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-5-2 |
|
IPB083N15N5LFATMA1MOSFET N-CH 150V 105A D2PAK Infineon Technologies |
955 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 8.3mOhm @ 100A, 10V | 4.9V @ 134µA | 45 nC @ 10 V | ±20V | 210 pF @ 75 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPZ60R041P6FKSA1MOSFET N-CH 600V 77.5A TO247-4 Infineon Technologies |
4,889 |
|
Tabla de datos |
CoolMOS™ P6 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 77.5A (Tc) | 10V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 170 nC @ 10 V | ±20V | 8180 pF @ 100 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
IGLR60R190D1XUMA1GAN HV Infineon Technologies |
4,065 |
|
Tabla de datos |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 12.8A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 55.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-6 |
|
|
IPP018N10N5AKSA1TRENCH >=100V Infineon Technologies |
460 |
|
Tabla de datos |
OptiMOS™ 5 | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta), 205A (Tc) | 6V, 10V | 1.83mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPZ65R095C7XKSA1MOSFET N-CH 650V 24A TO247-4 Infineon Technologies |
220 |
|
Tabla de datos |
CoolMOS™ C7 | TO-247-4 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
|
IPT014N10N5ATMA1TRENCH >=100V Infineon Technologies |
901 |
|
Tabla de datos |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | - | MOSFET (Metal Oxide) | 100 V | 362A | 10V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 |
|
BTS131E3045ANTMA1N-CHANNEL POWER MOSFET Infineon Technologies |
8,919 |
|
Tabla de datos |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 25A (Tc) | 4.5V | 60mOhm @ 12A, 4.5V | 2.5V @ 1mA | - | ±10V | 1400 pF @ 25 V | - | 75W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
AUIRFS3107TRLMOSFET N-CH 75V 195A D2PAK Infineon Technologies |
1,661 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9370 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
|
AUIRFSL8407MOSFET N-CH 40V 195A TO262 Infineon Technologies |
2,000 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
