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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9Z34NLPBFPLANAR 40<-<100V Infineon Technologies |
335 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
AUIRLU3114ZAUIRLU3114Z - 20V-40V N-CHANNEL Infineon Technologies |
3,631 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
|
AUIRLU3114Z-701TRLAUIRLU3114Z - 20V-40V N-CHANNEL Infineon Technologies |
39,000 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
|
IRF40DM229IRF40 - 12V-300V N-CHANNEL POWER Infineon Technologies |
4,194 |
|
Tabla de datos |
StrongIRFET™ | DirectFET™ Isometric MF | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 159A (Tc) | 6V, 10V | 1.85mOhm @ 97A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5317 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric MF |
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IRL8114PBFIRL8114 - 12V-300V N-CHANNEL POW Infineon Technologies |
8,800 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | - | 4.5mOhm @ 40A, 10V | 2.25V @ 250µA | 29 nC @ 4.5 V | ±20V | 2660 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF6797MTRPBFIRF6797 - 12V-300V N-CHANNEL POW Infineon Technologies |
16,950 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 36A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 38A, 10V | 2.35V @ 150µA | 68 nC @ 4.5 V | ±20V | 5790 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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AUIRF1010EZSAUIRF1010 - 55V-60V N-CHANNEL AU Infineon Technologies |
412 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF7580MTRPBFIRF7580 - 12V-300V N-CHANNEL POW Infineon Technologies |
1,536 |
|
Tabla de datos |
StrongIRFET™ | DirectFET™ Isometric ME | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 114A (Tc) | 6V, 10V | 3.6mOhm @ 70A, 10V | 3.7V @ 150µA | 180 nC @ 10 V | ±20V | 6510 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
|
AUIRFS8403AUIRFS8403 - 20V-40V N-CHANNEL A Infineon Technologies |
6,000 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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AUIRF1010ZLAUIRF1010 - 55V-60V N-CHANNEL AU Infineon Technologies |
5,000 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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