Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF7306TRPBF

    IRF7306TRPBF

    MOSFET 2P-CH 30V 3.6A 8SO

    Infineon Technologies

    16,544
    RFQ
    IRF7306TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDS4935BZ

    FDS4935BZ

    MOSFET 2P-CH 30V 6.9A 8SOIC

    onsemi

    10,412
    RFQ
    FDS4935BZ

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 6.9A 22mOhm @ 6.9A, 10V 3V @ 250µA 40nC @ 10V 1360pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDMA1028NZ

    FDMA1028NZ

    MOSFET 2N-CH 20V 3.7A 6MICROFET

    onsemi

    15,173
    RFQ
    FDMA1028NZ

    Tabla de datos

    PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.7A 68mOhm @ 3.7A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 340pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
    SI6926ADQ-T1-E3

    SI6926ADQ-T1-E3

    MOSFET 2N-CH 20V 4.1A 8TSSOP

    Vishay Siliconix

    28,266
    RFQ
    SI6926ADQ-T1-E3

    Tabla de datos

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.1A 30mOhm @ 4.5A, 4.5V 1V @ 250µA 10.5nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SIS903DN-T1-GE3

    SIS903DN-T1-GE3

    MOSFET 2P-CH 20V 6A PPAK 1212

    Vishay Siliconix

    10,801
    RFQ
    SIS903DN-T1-GE3

    Tabla de datos

    TrenchFET® Gen III PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 6A (Tc) 20.1mOhm @ 5A, 4.5V 1V @ 250µA 42nC @ 10V 2565pF @ 10V 2.6W (Ta), 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    SI5504BDC-T1-E3

    SI5504BDC-T1-E3

    MOSFET N/P-CH 30V 4A/3.7A 1206-8

    Vishay Siliconix

    11,740
    RFQ
    SI5504BDC-T1-E3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4A, 3.7A 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V 3.12W, 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    NTHD4102PT1G

    NTHD4102PT1G

    MOSFET 2P-CH 20V 2.9A CHIPFET

    onsemi

    41,871
    RFQ
    NTHD4102PT1G

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.9A 80mOhm @ 2.9A, 4.5V 1.5V @ 250µA 8.6nC @ 4.5V 750pF @ 16V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
    FDMA1032CZ

    FDMA1032CZ

    MOSFET N/P-CH 20V 3.7A 6MICROFET

    onsemi

    30,419
    RFQ
    FDMA1032CZ

    Tabla de datos

    PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.7A, 3.1A 68mOhm @ 3.7A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 340pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
    IRF7316TRPBF

    IRF7316TRPBF

    MOSFET 2P-CH 30V 4.9A 8SO

    Infineon Technologies

    30,848
    RFQ
    IRF7316TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDS4935A

    FDS4935A

    MOSFET 2P-CH 30V 7A 8SOIC

    onsemi

    18,774
    RFQ
    FDS4935A

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 7A 23mOhm @ 7A, 10V 3V @ 250µA 21nC @ 5V 1233pF @ 15V 900mW -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    SI4909DY-T1-GE3

    SI4909DY-T1-GE3

    MOSFET 2P-CH 40V 8A 8SOIC

    Vishay Siliconix

    15,674
    RFQ
    SI4909DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 40V 8A 27mOhm @ 8A, 10V 2.5V @ 250µA 63nC @ 10V 2000pF @ 20V 3.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDME1034CZT

    FDME1034CZT

    MOSFET N/P-CH 20V 3.8A 6MICROFET

    onsemi

    1,861
    RFQ
    FDME1034CZT

    Tabla de datos

    PowerTrench® 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.8A, 2.6A 66mOhm @ 3.4A, 4.5V 1V @ 250µA 4.2nC @ 4.5V 300pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (1.6x1.6)
    ZXMHC3F381N8TC

    ZXMHC3F381N8TC

    MOSFET 2N/2P-CH 30V 3.98A 8SO

    Diodes Incorporated

    95,914
    RFQ
    ZXMHC3F381N8TC

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 30V 3.98A, 3.36A 33mOhm @ 5A, 10V 3V @ 250µA 9nC @ 10V 430pF @ 15V, 670pF @ 15V 870mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ZXMHC6A07N8TC

    ZXMHC6A07N8TC

    MOSFET 2N/2P-CH 60V 1.39A 8SO

    Diodes Incorporated

    9,928
    RFQ
    ZXMHC6A07N8TC

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 60V 1.39A, 1.28A 250mOhm @ 1.8A, 10V 3V @ 250µA 3.2nC @ 10V 166pF @ 40V, 141pF @ 50V 870mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SI9926CDY-T1-GE3

    SI9926CDY-T1-GE3

    MOSFET 2N-CH 20V 8A 8SOIC

    Vishay Siliconix

    22,277
    RFQ
    SI9926CDY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 8A 18mOhm @ 8.3A, 4.5V 1.5V @ 250µA 33nC @ 10V 1200pF @ 10V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    EFC3J018NUZTDG

    EFC3J018NUZTDG

    MOSFET 2N-CH 20V 23A 6WLCSP

    onsemi

    19,908
    RFQ
    EFC3J018NUZTDG

    Tabla de datos

    - 6-XFBGA, WLCSP Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive 20V 23A (Ta) 4.7mOhm @ 5A, 4.5V 1.3V @ 1mA 75nC @ 4.5V - 2.5W (Ta) 150°C (TJ) - - Surface Mount 6-WLCSP (1.77x3.05)
    IRF7341TRPBFXTMA1

    IRF7341TRPBFXTMA1

    MOSFET 2N-CH 55V 4.7A 8DSO-902

    Infineon Technologies

    11,540
    RFQ
    IRF7341TRPBFXTMA1

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 55V 4.7A (Tc) 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-902
    IPG16N10S4L61AATMA1

    IPG16N10S4L61AATMA1

    MOSFET 2N-CH 100V 16A 8TDSON

    Infineon Technologies

    18,011
    RFQ
    IPG16N10S4L61AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 16A 61mOhm @ 16A, 10V 2.1V @ 90µA 11nC @ 10V 845pF @ 25V 29W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    QH8KA4TCR

    QH8KA4TCR

    MOSFET 2N-CH 30V 9A TSMT8

    Rohm Semiconductor

    1,311
    RFQ
    QH8KA4TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active - 2 N-Channel (Dual) - 30V 9A 17mOhm @ 7A, 4.5V 1.5V @ 1mA 12nC @ 4.5V 1400pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TSMT8
    IRF7389TRPBF

    IRF7389TRPBF

    MOSFET N/P-CH 30V 8SO

    Infineon Technologies

    2,795
    RFQ
    IRF7389TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    Total 5737 Record«Prev123456789...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios