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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SI7938DP-T1-GE3

    SI7938DP-T1-GE3

    MOSFET 2N-CH 40V 60A PPAK SO8

    Vishay Siliconix

    17,037
    RFQ
    SI7938DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 60A 5.8mOhm @ 18.5A, 10V 2.5V @ 250µA 65nC @ 10V 2300pF @ 20V 46W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    FDS89161

    FDS89161

    MOSFET 2N-CH 100V 2.7A 8SOIC

    onsemi

    9,535
    RFQ
    FDS89161

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 2.7A 105mOhm @ 2.7A, 10V 4V @ 250µA 4.1nC @ 10V 210pF @ 50V 1.6W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    STL76DN4LF7AG

    STL76DN4LF7AG

    MOSFET 2N-CH 40V 40A POWERFLAT

    STMicroelectronics

    5,293
    RFQ
    STL76DN4LF7AG

    Tabla de datos

    STripFET™ F7 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 40A (Tc) 6mOhm @ 10A, 10V 2.5V @ 250µA 17nC @ 10V 956pF @ 25V 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    DMHT6016LFJ-13

    DMHT6016LFJ-13

    MOSFET 4N-CH 60V 14.8A 12VDFN

    Diodes Incorporated

    10,072
    RFQ
    DMHT6016LFJ-13

    Tabla de datos

    - 12-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 60V 14.8A (Ta) 22mOhm @ 10A, 10V 3V @ 250µA 8.4nC @ 4.5V 864pF @ 30V - -55°C ~ 150°C (TJ) - - Surface Mount V-DFN5045-12
    IAUC60N04S6N031HATMA1

    IAUC60N04S6N031HATMA1

    MOSFET 2N-CH 40V 60A 8TDSON

    Infineon Technologies

    7,146
    RFQ
    IAUC60N04S6N031HATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 60A (Tj) 3.1mOhm @ 30A, 10V 3V @ 25µA 30nC @ 10V 1922pF @ 25V 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-56
    IRF7351TRPBF

    IRF7351TRPBF

    MOSFET 2N-CH 60V 8A 8SO

    Infineon Technologies

    27,053
    RFQ
    IRF7351TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 8A 17.8mOhm @ 8A, 10V 4V @ 50µA 36nC @ 10V 1330pF @ 30V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IPG20N10S4L22ATMA1

    IPG20N10S4L22ATMA1

    MOSFET 2N-CH 100V 20A 8TDSON

    Infineon Technologies

    16,793
    RFQ
    IPG20N10S4L22ATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 20A 22mOhm @ 17A, 10V 2.1V @ 25µA 27nC @ 10V 1755pF @ 25V 60W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    FDMQ8203

    FDMQ8203

    MOSFET 2N/2P-CH 100V/80V 12MLP

    onsemi

    3,055
    RFQ
    FDMQ8203

    Tabla de datos

    GreenBridge™ PowerTrench® 12-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 100V, 80V 3.4A, 2.6A 110mOhm @ 3A, 10V 4V @ 250µA 5nC @ 10V 210pF @ 50V, 850pF @ 40V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 12-MLP (5x4.5)
    SQ4920EY-T1_GE3

    SQ4920EY-T1_GE3

    MOSFET 2N-CH 30V 8A 8SOIC

    Vishay Siliconix

    5,899
    RFQ
    SQ4920EY-T1_GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 14.5mOhm @ 6A, 10V 2.5V @ 250µA 30nC @ 10V 1465pF @ 15V 4.4W -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    ZXMHC3A01T8TA

    ZXMHC3A01T8TA

    MOSFET 2N/2P-CH 30V 2.7A/2A SM8

    Diodes Incorporated

    30,192
    RFQ
    ZXMHC3A01T8TA

    Tabla de datos

    - SOT-223-8 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 30V 2.7A, 2A 120mOhm @ 2.5A, 10V 3V @ 250µA 3.9nC @ 10V 190pF @ 25V, 204pF @ 15V 1.3W -55°C ~ 150°C (TJ) - - Surface Mount SM8
    IRF7341GTRPBF

    IRF7341GTRPBF

    MOSFET 2N-CH 55V 5.1A 8SO

    Infineon Technologies

    9,716
    RFQ
    IRF7341GTRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 55V 5.1A 50mOhm @ 5.1A, 10V 1V @ 250µA (Min) 44nC @ 10V 780pF @ 25V 2.4W -55°C ~ 175°C (TJ) - - Surface Mount 8-SO
    NDS9945

    NDS9945

    MOSFET 2N-CH 60V 3.5A 8SOIC

    onsemi

    5,219
    RFQ
    NDS9945

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 3.5A 100mOhm @ 3.5A, 10V 3V @ 250µA 30nC @ 10V 345pF @ 25V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDS3890

    FDS3890

    MOSFET 2N-CH 80V 4.7A 8SOIC

    onsemi

    1,507
    RFQ
    FDS3890

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V 4.7A 44mOhm @ 4.7A, 10V 4V @ 250µA 35nC @ 10V 1180pF @ 40V 900mW -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    TC8220K6-G

    TC8220K6-G

    MOSFET 2N/2P-CH 200V 12DFN

    Microchip Technology

    3,481
    RFQ
    TC8220K6-G

    Tabla de datos

    - 12-VFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel - 200V - 6Ohm @ 1A, 10V 2.4V @ 1mA - 56pF @ 25V, 75pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 12-DFN (4x4)
    SI4204DY-T1-GE3

    SI4204DY-T1-GE3

    MOSFET 2N-CH 20V 19.8A 8SOIC

    Vishay Siliconix

    18,930
    RFQ
    SI4204DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 19.8A 4.6mOhm @ 10A, 10V 2.4V @ 250µA 45nC @ 10V 2110pF @ 10V 3.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    EPC2106

    EPC2106

    MOSFET 2N-CH 100V 1.7A DIE

    EPC

    59,446
    RFQ
    EPC2106

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 1.7A 70mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    SI7252DP-T1-GE3

    SI7252DP-T1-GE3

    MOSFET 2N-CH 100V 36.7A PPAK SO8

    Vishay Siliconix

    11,271
    RFQ
    SI7252DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 36.7A 18mOhm @ 15A, 10V 3.5V @ 250µA 27nC @ 10V 1170pF @ 50V 46W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7997DP-T1-GE3

    SI7997DP-T1-GE3

    MOSFET 2P-CH 30V 60A PPAK SO8

    Vishay Siliconix

    23,914
    RFQ
    SI7997DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 60A 5.5mOhm @ 20A, 10V 2.2V @ 250µA 160nC @ 10V 6200pF @ 15V 46W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI4904DY-T1-E3

    SI4904DY-T1-E3

    MOSFET 2N-CH 40V 8A 8SOIC

    Vishay Siliconix

    4,920
    RFQ
    SI4904DY-T1-E3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 8A 16mOhm @ 5A, 10V 2V @ 250µA 85nC @ 10V 2390pF @ 20V 3.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NVMFD5C672NLT1G

    NVMFD5C672NLT1G

    MOSFET 2N-CH 60V 12A 8DFN

    onsemi

    1,514
    RFQ
    NVMFD5C672NLT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 12A (Ta), 49A (Tc) 11.9mOhm @ 10A, 10V 2.2V @ 30µA 5.7nC @ 4.5V 793pF @ 25V 3.1W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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