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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NTJD1155LT1G

    NTJD1155LT1G

    MOSFET N/P-CH 8V 1.3A SC88

    onsemi

    62,962
    RFQ
    NTJD1155LT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 8V 1.3A 175mOhm @ 1.2A, 4.5V 1V @ 250µA - - 400mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
    DMP2065UFDB-7

    DMP2065UFDB-7

    MOSFET 2P-CH 20V 4.5A 6UDFN

    Diodes Incorporated

    11,764
    RFQ
    DMP2065UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 4.5A (Ta) 50mOhm @ 2A, 4.5V 1V @ 250µA 9.1nC @ 4.5V 752pF @ 15V 1.54W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    SI1026X-T1-GE3

    SI1026X-T1-GE3

    MOSFET 2N-CH 60V 0.305A SC89

    Vishay Siliconix

    296,754
    RFQ
    SI1026X-T1-GE3

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 305mA 1.4Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 4.5V 30pF @ 25V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
    SI3993CDV-T1-GE3

    SI3993CDV-T1-GE3

    MOSFET 2P-CH 30V 2.9A 6TSOP

    Vishay Siliconix

    34,240
    RFQ
    SI3993CDV-T1-GE3

    Tabla de datos

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 2.9A 111mOhm @ 2.5A, 10V 2.2V @ 250µA 8nC @ 10V 210pF @ 15V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SI1025X-T1-GE3

    SI1025X-T1-GE3

    MOSFET 2P-CH 60V 0.19A SC89

    Vishay Siliconix

    20,047
    RFQ
    SI1025X-T1-GE3

    Tabla de datos

    TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 190mA 4Ohm @ 500mA, 10V 3V @ 250µA 1.7nC @ 15V 23pF @ 25V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
    AO6604

    AO6604

    MOSFET N/P-CH 20V 3.4A 6TSOP

    Alpha & Omega Semiconductor Inc.

    103,031
    RFQ
    AO6604

    Tabla de datos

    - SC-74, SOT-457 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate, 4.5V Drive 20V 3.4A, 2.5A 65mOhm @ 3.4A, 4.5V 1V @ 250µA 3.8nC @ 4.5V 320pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    EM6M2T2R

    EM6M2T2R

    MOSFET N/P-CH 20V 0.2A EMT6

    Rohm Semiconductor

    62,679
    RFQ
    EM6M2T2R

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 200mA 1Ohm @ 200mA, 4V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    SIA931DJ-T1-GE3

    SIA931DJ-T1-GE3

    MOSFET 2P-CH 30V 4.5A PPAK8X8

    Vishay Siliconix

    33,893
    RFQ
    SIA931DJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 65mOhm @ 3A, 10V 2.2V @ 250µA 13nC @ 10V 445pF @ 15V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SI1024X-T1-GE3

    SI1024X-T1-GE3

    MOSFET 2N-CH 20V 0.485A SC89

    Vishay Siliconix

    47,916
    RFQ
    SI1024X-T1-GE3

    Tabla de datos

    TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 485mA 700mOhm @ 600mA, 4.5V 900mV @ 250µA 0.75nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
    DMC3021LSD-13

    DMC3021LSD-13

    MOSFET N/P-CH 30V 8.5A/7A 8SO

    Diodes Incorporated

    62,440
    RFQ
    DMC3021LSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 8.5A, 7A 21mOhm @ 7A, 10V 2.1V @ 250µA 16.1nC @ 10V 767pF @ 10V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDY1002PZ

    FDY1002PZ

    MOSFET 2P-CH 20V 0.83A SOT563F

    onsemi

    14,877
    RFQ
    FDY1002PZ

    Tabla de datos

    PowerTrench® SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 830mA 500mOhm @ 830mA, 4.5V 1V @ 250µA 3.1nC @ 4.5V 135pF @ 10V 446mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563F
    CSD87381P

    CSD87381P

    MOSFET 2N-CH 30V 15A 5PTAB

    Texas Instruments

    5,529
    RFQ
    CSD87381P

    Tabla de datos

    NexFET™ 5-LGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 30V 15A 16.3mOhm @ 8A, 8V 1.9V @ 250µA 5nC @ 4.5V 564pF @ 15V 4W -55°C ~ 150°C (TJ) - - Surface Mount 5-PTAB (3x2.5)
    SQ3989EV-T1_GE3

    SQ3989EV-T1_GE3

    MOSFET 2P-CH 30V 2.5A 6TSOP

    Vishay Siliconix

    31,888
    RFQ
    SQ3989EV-T1_GE3

    Tabla de datos

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 2.5A (Tc) 155mOhm @ 400mA, 10V 1.5V @ 250µA 11.1nC @ 10V - 1.67W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    IRF9389TRPBF

    IRF9389TRPBF

    MOSFET N/P-CH 30V 6.8A/4.6A 8SO

    Infineon Technologies

    22,273
    RFQ
    IRF9389TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 6.8A, 4.6A 27mOhm @ 6.8A, 10V 2.3V @ 10µA 14nC @ 10V 398pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SIA533EDJ-T1-GE3

    SIA533EDJ-T1-GE3

    MOSFET N/P-CH 12V 4.5A PPAK8X8

    Vishay Siliconix

    18,052
    RFQ
    SIA533EDJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 12V 4.5A 34mOhm @ 4.6A, 4.5V 1V @ 250µA 15nC @ 10V 420pF @ 6V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    AO4614B

    AO4614B

    MOSFET N/P-CH 40V 6A/5A 8SOIC

    Alpha & Omega Semiconductor Inc.

    46,439
    RFQ
    AO4614B

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 40V 6A, 5A 30mOhm @ 6A, 10V 3V @ 250µA 10.8nC @ 10V 650pF @ 20V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDC6333C

    FDC6333C

    MOSFET N/P-CH 30V 2.5A/2A SSOT6

    onsemi

    25,788
    RFQ
    FDC6333C

    Tabla de datos

    PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 2.5A, 2A 95mOhm @ 2.5A, 10V 3V @ 250µA 6.6nC @ 10V 282pF @ 15V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    FDC6321C

    FDC6321C

    MOSFET N/P-CH 25V 0.68A SSOT6

    onsemi

    7,941
    RFQ
    FDC6321C

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 25V 680mA, 460mA 450mOhm @ 500mA, 4.5V 1.5V @ 250µA 2.3nC @ 5V 50pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    IRLHS6376TRPBF

    IRLHS6376TRPBF

    MOSFET 2N-CH 30V 3.6A PQFN

    Infineon Technologies

    122,321
    RFQ
    IRLHS6376TRPBF

    Tabla de datos

    HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63mOhm @ 3.4A, 4.5V 1.1V @ 10µA 2.8nC @ 4.5V 270pF @ 25V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN Dual (2x2)
    FDC6305N

    FDC6305N

    MOSFET 2N-CH 20V 2.7A SSOT6

    onsemi

    13,843
    RFQ
    FDC6305N

    Tabla de datos

    PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 2.7A 80mOhm @ 2.7A, 4.5V 1.5V @ 250µA 5nC @ 4.5V 310pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
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