Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NTJD4001NT1G

    NTJD4001NT1G

    MOSFET 2N-CH 30V 0.25A SC88

    onsemi

    41,860
    RFQ
    NTJD4001NT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 250mA 1.5Ohm @ 10mA, 4V 1.5V @ 100µA 1.3nC @ 5V 33pF @ 5V 272mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
    DMC3071LVT-7

    DMC3071LVT-7

    MOSFET N/P-CH 30V 4.6A TSOT26

    Diodes Incorporated

    17,657
    RFQ
    DMC3071LVT-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 4.6A (Ta), 3.3A (Ta) 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V 2.5V @ 250µA 4.5nC @ 10V, 6.5nC @ 10V 190pF @ 15V, 254pF @ 15V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    NTZD3155CT1G

    NTZD3155CT1G

    MOSFET N/P-CH 20V 0.54A SOT563

    onsemi

    58,836
    RFQ
    NTZD3155CT1G

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 540mA, 430mA 550mOhm @ 540mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 150pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    MCM3400A-TP

    MCM3400A-TP

    MOSFET 2N-CH 30V 5A 6DFN

    Micro Commercial Co

    61,963
    RFQ
    MCM3400A-TP

    Tabla de datos

    - 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 5A 32mOhm @ 5.8A, 10V 1.5V @ 250µA - 1155pF @ 15V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount DFN2020-6L
    PMDXB550UNEZ

    PMDXB550UNEZ

    MOSFET 2N-CH 30V 0.59A 6DFN

    Nexperia USA Inc.

    31,763
    RFQ
    PMDXB550UNEZ

    Tabla de datos

    - 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 590mA 670mOhm @ 590mA, 4.5V 950mV @ 250µA 1.05nC @ 4.5V 30.3pF @ 15V 285mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
    SI1539CDL-T1-GE3

    SI1539CDL-T1-GE3

    MOSFET N/P-CH 30V 0.7A SC70-6

    Vishay Siliconix

    27,617
    RFQ
    SI1539CDL-T1-GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 700mA, 500mA 388mOhm @ 600mA, 10V 2.5V @ 250µA 1.5nC @ 10V 28pF @ 15V 340mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    BSS138DWQ-7

    BSS138DWQ-7

    MOSFET 2N-CH 50V 0.2A SOT363

    Diodes Incorporated

    10,834
    RFQ
    BSS138DWQ-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 200mA 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - 50pF @ 10V 200mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
    SSM6N58NU,LF

    SSM6N58NU,LF

    MOSFET 2N-CH 30V 4A 6UDFN

    Toshiba Semiconductor and Storage

    143,314
    RFQ
    SSM6N58NU,LF

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A 84mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V 1W 150°C (TJ) - - Surface Mount 6-UDFN (2x2)
    BSS138DW-7-F

    BSS138DW-7-F

    MOSFET 2N-CH 50V 0.2A SOT363

    Diodes Incorporated

    56,494
    RFQ
    BSS138DW-7-F

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 200mA 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - 50pF @ 10V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SI1016CX-T1-GE3

    SI1016CX-T1-GE3

    MOSFET N/P-CH 20V SC89

    Vishay Siliconix

    34,012
    RFQ
    SI1016CX-T1-GE3

    Tabla de datos

    TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V - 396mOhm @ 500mA, 4.5V 1V @ 250µA 2nC @ 4.5V 43pF @ 10V 220mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
    SSM6N57NU,LF

    SSM6N57NU,LF

    MOSFET 2N-CH 30V 4A 6DFN

    Toshiba Semiconductor and Storage

    86,896
    RFQ
    SSM6N57NU,LF

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4A 46mOhm @ 2A, 4.5V 1V @ 1mA 4nC @ 4.5V 310pF @ 10V 1W 150°C (TJ) - - Surface Mount 6-µDFN (2x2)
    FDC6301N

    FDC6301N

    MOSFET 2N-CH 25V 0.22A SSOT6

    onsemi

    22,892
    RFQ
    FDC6301N

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 220mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 4.5V 9.5pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    DMN2004DWK-7

    DMN2004DWK-7

    MOSFET 2N-CH 20V 0.54A SOT363

    Diodes Incorporated

    13,515
    RFQ
    DMN2004DWK-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA - 150pF @ 16V 200mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-363
    NTJD4152PT1G

    NTJD4152PT1G

    MOSFET 2P-CH 20V 0.88A SC88

    onsemi

    58,160
    RFQ
    NTJD4152PT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 880mA 260mOhm @ 880mA, 4.5V 1.2V @ 250µA 2.2nC @ 4.5V 155pF @ 20V 272mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
    DMN2004DMK-7

    DMN2004DMK-7

    MOSFET 2N-CH 20V 0.54A SOT26

    Diodes Incorporated

    128,059
    RFQ

    -

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA - 150pF @ 16V 225mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-26
    AOSD32334C

    AOSD32334C

    MOSFET 2N-CH 30V 7A 8SOIC

    Alpha & Omega Semiconductor Inc.

    110,880
    RFQ
    AOSD32334C

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7A (Ta) 20mOhm @ 7A, 10V 2.3V @ 250µA 20nC @ 10V 600pF @ 15V 1.7W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    DMC31D5UDJ-7

    DMC31D5UDJ-7

    MOSFET N/P-CH 30V 0.22A SOT963

    Diodes Incorporated

    28,423
    RFQ
    DMC31D5UDJ-7

    Tabla de datos

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 220mA, 200mA 1.5Ohm @ 100mA, 4.5V 1V @ 250µA 0.38nC @ 4.5V 22.6pF @ 15V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
    NDC7002N

    NDC7002N

    MOSFET 2N-CH 50V 0.51A SSOT6

    onsemi

    91,170
    RFQ
    NDC7002N

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 510mA 2Ohm @ 510mA, 10V 2.5V @ 250µA 1nC @ 10V 20pF @ 25V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    AO4629

    AO4629

    MOSFET N/P-CH 30V 6A/5.5A 8SOIC

    Alpha & Omega Semiconductor Inc.

    186,438
    RFQ
    AO4629

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain Logic Level Gate 30V 6A, 5.5A 30mOhm @ 6A, 10V 2.4V @ 250µA 6.3nC @ 10V 310pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    DMC3025LSD-13

    DMC3025LSD-13

    MOSFET N/P-CH 30V 6.5A/4.2A 8SO

    Diodes Incorporated

    8,646
    RFQ
    DMC3025LSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 6.5A, 4.2A 20mOhm @ 7.4A, 10V 2V @ 250µA 9.8nC @ 10V 501pF @ 15V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    Total 5737 Record«Prev12345...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios