Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    HT8KC5TB1

    HT8KC5TB1

    MOSFET 2N-CH 60V 3.5A 8HSMT

    Rohm Semiconductor

    2,928
    RFQ
    HT8KC5TB1

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 3.5A (Ta), 10A (Tc) 90mOhm @ 3.5A, 10V 2.5V @ 1mA 3.1nC @ 10V 135pF @ 30V 2W (Ta), 13W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    SH8MC4TB1

    SH8MC4TB1

    MOSFET N/P-CH 60V 3.5A 8SOP

    Rohm Semiconductor

    2,500
    RFQ
    SH8MC4TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 3.5A (Ta), 4A (Ta) 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V 2.5V @ 1mA 3.1nC @ 10V, 17.3nC @ 10V 135pF @ 30V, 850pF @ 30V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    QS8J1TR

    QS8J1TR

    MOSFET 2P-CH 12V 4.5A TSMT8

    Rohm Semiconductor

    6,000
    RFQ
    QS8J1TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.5A 29mOhm @ 4.5A, 4.5V 1V @ 1mA 31nC @ 4.5V 2450pF @ 6V 1.5W 150°C (TJ) - - Surface Mount TSMT8
    SH8MB4TB1

    SH8MB4TB1

    MOSFET N/P-CH 40V 4.5A 8SOP

    Rohm Semiconductor

    2,490
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 4.5A (Ta), 5.5A (Ta) 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V 2.5V @ 1mA 3.5nC @ 10V, 17.2nC @ 10V 150pF @ 20V, 920pF @ 20V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    QS8K13TCR

    QS8K13TCR

    MOSFET 2N-CH 30V 6A TSMT8

    Rohm Semiconductor

    2,980
    RFQ
    QS8K13TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6A 28mOhm @ 6A, 10V 2.5V @ 1mA 20nC @ 10V 390pF @ 10V 550mW 150°C (TJ) - - Surface Mount TSMT8
    HP8ME5TB1

    HP8ME5TB1

    MOSFET N/P-CH 100V 3A 8HSOP

    Rohm Semiconductor

    1,142
    RFQ
    HP8ME5TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc) 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V 2.5V @ 1mA 2.9nC @ 10V, 19.7nC @ 10V 90pF @ 50V, 590pF @ 50V 3W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    SH8M41GZETB

    SH8M41GZETB

    MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

    Rohm Semiconductor

    2,477
    RFQ
    SH8M41GZETB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4V Drive 80V 3.4A, 2.6A 130mOhm @ 3.4A, 10V 2.5V @ 1mA 9.2nC @ 5V 600pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    HP8MC5TB1

    HP8MC5TB1

    MOSFET N/P-CH 60V 4.5A 8HSOP

    Rohm Semiconductor

    2,500
    RFQ
    HP8MC5TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc) 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V 2.5V @ 1mA 3.1nC @ 10V, 17.3nC @ 10V 135pF @ 30V, 850pF @ 30V 3W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    HP8MB5TB1

    HP8MB5TB1

    MOSFET N/P-CH 40V 6A 8HSOP

    Rohm Semiconductor

    2,475
    RFQ
    HP8MB5TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V 2.5V @ 1mA 3.5nC @ 10V, 17.2nC @ 10V 150pF @ 20V, 920pF @ 20V 3W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    HT8KE6TB1

    HT8KE6TB1

    MOSFET 2N-CH 100V 4.5A 8HSMT

    Rohm Semiconductor

    2,980
    RFQ
    HT8KE6TB1

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 4.5A (Ta), 13A (Tc) 57mOhm @ 4.5A, 10V 2.5V @ 1mA 6.7nC @ 10V 305pF @ 50V 2W (Ta), 14W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    Total 300 Record«Prev1... 1213141516171819...30Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios