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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NXH011F120M3F2PTHG

    NXH011F120M3F2PTHG

    MOSFET 4N-CH 1200V 105A 34PIM

    onsemi

    13
    RFQ
    NXH011F120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 16mOhm @ 100A, 18V 4.4V @ 60mA 284nC @ 18V 6211.6pF @ 800V 244W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
    NXH007F120M3F2PTHG

    NXH007F120M3F2PTHG

    MOSFET 4N-CH 1200V 149A 34PIM

    onsemi

    6
    RFQ
    NXH007F120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V 9090pF @ 800V 353W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
    NXH008T120M3F2PTHG

    NXH008T120M3F2PTHG

    MOSFET 4N-CH 1200V 129A 29PIM

    onsemi

    18
    RFQ
    NXH008T120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V 9129pF @ 800V 371W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
    NXH004P120M3F2PNG

    NXH004P120M3F2PNG

    MOSFET 2N-CH 1200V 338A 36PIM

    onsemi

    20
    RFQ
    NXH004P120M3F2PNG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 338A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.098W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    NVVR26A120M1WST

    NVVR26A120M1WST

    MOSFET 2N-CH 1200V AHPM15-CDA

    onsemi

    6
    RFQ
    NVVR26A120M1WST

    Tabla de datos

    - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDA
    NVXR22S90M2SPB

    NVXR22S90M2SPB

    MOSFET 6N-CH 900V 510A SSDC39

    onsemi

    4
    RFQ
    NVXR22S90M2SPB

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 900V 510A (Tj) 2.7mOhm @ 510A, 18V 4.3V @ 150mA 1800nC @ 18V 35000pF @ 400V 900W (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Chassis Mount SSDC39
    NVXR22S90M2SPC

    NVXR22S90M2SPC

    MOSFET 6N-CH 900V 510A SSDC39

    onsemi

    3
    RFQ
    NVXR22S90M2SPC

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 900V 510A (Tj) 2.7mOhm @ 510A, 18V 4.3V @ 150mA 1800nC @ 18V 35000pF @ 400V 900W (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Chassis Mount SSDC39
    NVXR17S90M2SPB

    NVXR17S90M2SPB

    MOSFET 6N-CH 900V 620A SSDC39

    onsemi

    7
    RFQ
    NVXR17S90M2SPB

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 900V 620A (Tj) 2.1mOhm @ 620A, 18V 4.3V @ 200mA 2400nC @ 18V 45000pF @ 400V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Chassis Mount SSDC39
    NVXR17S90M2SPC

    NVXR17S90M2SPC

    MOSFET 6N-CH 900V 620A SSDC39

    onsemi

    3
    RFQ
    NVXR17S90M2SPC

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 900V 620A (Tj) 2.1mOhm @ 620A, 18V 4.3V @ 200mA 2400nC @ 18V 45000pF @ 400V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Chassis Mount SSDC39
    NTZD3154NT5G

    NTZD3154NT5G

    MOSFET 2N-CH 20V 0.54A SOT563

    onsemi

    314
    RFQ
    NTZD3154NT5G

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 150pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    Total 962 Record«Prev1... 5253545556575859...97Next»
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