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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NVMFWD010N10MCLT1G

    NVMFWD010N10MCLT1G

    MOSFET 2N-CH 100V 11.6A 8DFN

    onsemi

    9,000
    RFQ

    -

    - 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    FDMS1D2N03DSD

    FDMS1D2N03DSD

    MOSFET

    onsemi

    52,964
    RFQ
    FDMS1D2N03DSD

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    NVMFD040N10MCLT1G

    NVMFD040N10MCLT1G

    MOSFET 2N-CH 100V 6.1A 8DFN

    onsemi

    6,000
    RFQ

    -

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    NXH020U90MNF2PTG

    NXH020U90MNF2PTG

    MOSFET 2N-CH 900V 149A

    onsemi

    4
    RFQ
    NXH020U90MNF2PTG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 900V 149A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 352W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NVXK2VR40WXT2

    NVXK2VR40WXT2

    MOSFET 6N-CH 1200V 55A APM32

    onsemi

    14
    RFQ
    NVXK2VR40WXT2

    Tabla de datos

    - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
    NVVR26A120M1WSB

    NVVR26A120M1WSB

    MOSFET 2N-CH 1200V AHPM15-CDE

    onsemi

    10
    RFQ
    NVVR26A120M1WSB

    Tabla de datos

    - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
    NVVR26A120M1WSS

    NVVR26A120M1WSS

    MOSFET 2N-CH 1200V AHPM15-CDI

    onsemi

    9
    RFQ
    NVVR26A120M1WSS

    Tabla de datos

    - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
    FAM65CR51DZ1

    FAM65CR51DZ1

    MOSFET 2N-CH 650V 33A APMCD-B16

    onsemi

    67
    RFQ
    FAM65CR51DZ1

    Tabla de datos

    - 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 33A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 160W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
    NXH015P120M3F1PTG

    NXH015P120M3F1PTG

    MOSFET 2N-CH 1200V 77A

    onsemi

    13
    RFQ
    NXH015P120M3F1PTG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH008P120M3F1PG

    NXH008P120M3F1PG

    MOSFET 2N-CH 1200V 145A

    onsemi

    18
    RFQ
    NXH008P120M3F1PG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    Total 962 Record«Prev1... 5152535455565758...97Next»
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