Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDML7610ASDUAL N-CH. ER TRENCH MO onsemi |
27,000 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ECH8662-TL-HECH8662 - MOSFET 2 N-CHANNEL ARR onsemi |
3,000 |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ECH8664R-TL-HECH8664R - N-CHANNEL POWER MOSFE onsemi |
21,000 |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFD4C820NAT1GMOSFET 2N-CH 30V 9.1A 8DFN onsemi |
1,500 |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 9.1A (Ta), 13.7A (Ta) | 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V | 2.1V @ 250µA | 19nC @ 10V, 29nC @ 10V | 970pF @ 15V, 1950pF @ 15V | 1.09W (Ta), 1.15W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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NVMFWD040N10MCLT1GMOSFET 2N-CH 100V 6.1A 8DFN onsemi |
6,000 |
|
- |
- | 8-PowerTDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 6.1A (Ta), 21A (Tc) | 39mOhm @ 5A, 10V | 3V @ 26µA | 8.4nC @ 10V | 520pF @ 50V | 3.2W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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FDS6892APOWER FIELD-EFFECT TRANSISTOR, 7 onsemi |
4,514 |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMS3616SSMALL SIGNAL FIELD-EFFECT TRANSI onsemi |
6,000 |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS6912POWER FIELD-EFFECT TRANSISTOR, 6 onsemi |
20,207 |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NVMFD010N10MCLT1GMOSFET 2N-CH 100V 11.6A 8DFN onsemi |
9,000 |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 11.6A (Ta), 61A (Tc) | 10.4mOhm @ 17A, 10V | 3V @ 97µA | 26nC @ 10V | 1800pF @ 50V | 3.1W (Ta), 84W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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NTMFD0D9N02P1EMOSFET 2N-CH 30V/25V 14A 8PQFN onsemi |
161,223 |
|
- |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | - | 30V, 25V | 14A (Ta), 30A (Ta) | 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V | 2V @ 340µA, 2V @ 1mA | 9nC @ 4.5V, 30nC @ 4.5V | 1400pF @ 15V, 5050pF @ 13V | 960mW (Ta), 1.04W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |