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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    DMC2053UVT-13

    DMC2053UVT-13

    MOSFET N/P-CH 20V 4.6A TSOT26

    Diodes Incorporated

    16,842
    RFQ
    DMC2053UVT-13

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 4.6A (Ta), 3.2A (Ta) 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V 1V @ 250µA 3.6nC @ 4.5V, 5.9nC @ 4.5V 369pF @ 10V, 440pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    DMN2990UDJ-7

    DMN2990UDJ-7

    MOSFET 2N-CH 20V 0.45A SOT963

    Diodes Incorporated

    14,175
    RFQ
    DMN2990UDJ-7

    Tabla de datos

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 450mA 990mOhm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 27.6pF @ 16V 350mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
    EFC4627R-TR

    EFC4627R-TR

    MOSFET 2N-CH 12V 6A 4EFCP

    onsemi

    6,923
    RFQ
    EFC4627R-TR

    Tabla de datos

    - 4-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive - - - - 13.4nC @ 4.5V - 1.4W 150°C (TJ) - - Surface Mount 4-EFCP (1.01x1.01)
    SI1036X-T1-GE3

    SI1036X-T1-GE3

    MOSFET 2N-CH 30V 0.61A SC89-6

    Vishay Siliconix

    6,409
    RFQ
    SI1036X-T1-GE3

    Tabla de datos

    TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 610mA (Ta) 540mOhm @ 500mA, 4.5V 1V @ 250µA 1.2nC @ 4.5V 36pF @ 15V 220mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89-6
    PMDT290UCE,115

    PMDT290UCE,115

    MOSFET N/P-CH 20V 0.8A SOT666

    Nexperia USA Inc.

    5,110
    RFQ
    PMDT290UCE,115

    Tabla de datos

    TrenchMOS™ SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 800mA, 550mA 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 500mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-666
    DMN2004VK-7

    DMN2004VK-7

    MOSFET 2N-CH 20V 0.54A SOT563

    Diodes Incorporated

    87,727
    RFQ

    -

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA - 150pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    NTJD4158CT1G

    NTJD4158CT1G

    MOSFET N/P-CH 30V/20V 0.25A SC88

    onsemi

    14,345
    RFQ
    NTJD4158CT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 250mA, 880mA 1.5Ohm @ 10mA, 4.5V 1.5V @ 100µA 1.5nC @ 5V 33pF @ 5V 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
    PMGD175XNEX

    PMGD175XNEX

    MOSFET 2N-CH 30V 0.87A 6TSSOP

    Nexperia USA Inc.

    1,846
    RFQ
    PMGD175XNEX

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 870mA (Ta) 252mOhm @ 900mA, 4.5V 1.25V @ 250µA 1.65nC @ 4.5V 81pF @ 15V 260mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSSOP
    DMN1029UFDB-7

    DMN1029UFDB-7

    MOSFET 2N-CH 12V 5.6A 6UDFN

    Diodes Incorporated

    136,808
    RFQ
    DMN1029UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 12V 5.6A 29mOhm @ 5A, 4.5V 1V @ 250µA 19.6nC @ 8V 914pF @ 6V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMP2004VK-7

    DMP2004VK-7

    MOSFET 2P-CH 20V 0.53A SOT563

    Diodes Incorporated

    46,874
    RFQ
    DMP2004VK-7

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 530mA 900mOhm @ 430mA, 4.5V 1V @ 250µA - 175pF @ 16V 400mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-563
    DMN2990UDJQ-7

    DMN2990UDJQ-7

    MOSFET 2N-CH 0.45A SOT963

    Diodes Incorporated

    29,180
    RFQ
    DMN2990UDJQ-7

    Tabla de datos

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - 450mA (Ta) 990mOhm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 27.6pF @ 16V - -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
    DMP1046UFDB-7

    DMP1046UFDB-7

    MOSFET 2P-CH 12V 3.8A 6UDFN

    Diodes Incorporated

    16,256
    RFQ
    DMP1046UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 12V 3.8A 61mOhm @ 3.6A, 4.5V 1V @ 250µA 17.9nC @ 8V 915pF @ 6V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    SI1902CDL-T1-GE3

    SI1902CDL-T1-GE3

    MOSFET 2N-CH 20V 1.1A SC70-6

    Vishay Siliconix

    13,560
    RFQ
    SI1902CDL-T1-GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.1A 235mOhm @ 1A, 4.5V 1.5V @ 250µA 3nC @ 10V 62pF @ 10V 420mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SSM6N40TU,LF

    SSM6N40TU,LF

    MOSFET 2N-CH 30V 1.6A UF6

    Toshiba Semiconductor and Storage

    7,754
    RFQ
    SSM6N40TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 1.6A (Ta) 122mOhm @ 1A, 10V 2.6V @ 1mA 5.1nC @ 10V 180pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
    SSM6L40TU,LF

    SSM6L40TU,LF

    MOSFET N/P-CH 30V 1.6A UF6

    Toshiba Semiconductor and Storage

    112,270
    RFQ
    SSM6L40TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4V Drive 30V 1.6A (Ta), 1.4A (Ta) 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V 2.6V @ 1mA, 2V @ 1mA 5.1nC @ 10V, 2.9nC @ 10V 180pF @ 15V, 120pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
    NTJD4105CT1G

    NTJD4105CT1G

    MOSFET N/P-CH 20V/8V 0.63A SC88

    onsemi

    19,552
    RFQ
    NTJD4105CT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 8V 630mA, 775mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
    SSM6L39TU,LF

    SSM6L39TU,LF

    MOSFET N/P-CH 20V 0.8A UF6

    Toshiba Semiconductor and Storage

    3,031
    RFQ
    SSM6L39TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.8V Drive 20V 800mA 143mOhm @ 600MA, 4V 1V @ 1mA - 268pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
    MC7252KDW-TP

    MC7252KDW-TP

    MOSFET N/P-CH 60V 0.34A SOT363

    Micro Commercial Co

    69,473
    RFQ
    MC7252KDW-TP

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V, 50V 340mA, 180mA 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V 2.5V @ 1mA, 2V @ 250µA - 40pF, 30pF @ 10V, 5V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SQ1912EH-T1_GE3

    SQ1912EH-T1_GE3

    MOSFET 2N-CH 20V 0.8A SC70-6

    Vishay Siliconix

    24,615
    RFQ
    SQ1912EH-T1_GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 800mA (Tc) 280mOhm @ 1.2A, 4.5V 1.5V @ 250µA 1.15nC @ 4.5V 75pF @ 10V 1.5W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SC-70-6
    SSM6N67NU,LF

    SSM6N67NU,LF

    MOSFET 2N-CH 30V 4A 6DFN

    Toshiba Semiconductor and Storage

    18,284
    RFQ
    SSM6N67NU,LF

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A (Ta) 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2nC @ 4.5V 310pF @ 15V 2W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
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