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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SSM6P35AFE,LF

    SSM6P35AFE,LF

    MOSFET 2P-CH 20V 0.25A ES6

    Toshiba Semiconductor and Storage

    6,009
    RFQ
    SSM6P35AFE,LF

    Tabla de datos

    U-MOSVII SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 250mA (Ta) 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
    NX6020CAKSX

    NX6020CAKSX

    MOSFET N/P-CH 60V 0.17A 6TSSOP

    Nexperia USA Inc.

    4,977
    RFQ
    NX6020CAKSX

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V, 50V 170mA (Ta) 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.43nC @ 4.5V, 0.35nC @ 5V 17pF @ 10V, 36pF @ 25V 330mW -55°C ~ 150°C (TJ) - - Surface Mount 6-TSSOP
    DMC3400SDW-7

    DMC3400SDW-7

    MOSFET N/P-CH 30V 0.65A SOT363

    Diodes Incorporated

    168,748
    RFQ
    DMC3400SDW-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 650mA, 450mA 400mOhm @ 590mA, 10V 1.6V @ 250µA 1.4nC @ 10V 55pF @ 15V 310mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SSM6N44FE,LM

    SSM6N44FE,LM

    MOSFET 2N-CH 30V 0.1A ES6

    Toshiba Semiconductor and Storage

    135,240
    RFQ
    SSM6N44FE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 4Ohm @ 10mA, 4V 1.5V @ 100µA - 8.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
    DMC3400SDW-13

    DMC3400SDW-13

    MOSFET N/P-CH 30V 0.65A SOT363

    Diodes Incorporated

    110,268
    RFQ
    DMC3400SDW-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 650mA, 450mA 400mOhm @ 590mA, 10V 1.6V @ 250µA 1.4nC @ 10V 55pF @ 15V 310mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMP2200UDW-13

    DMP2200UDW-13

    MOSFET 2P-CH 20V 0.9A SOT363

    Diodes Incorporated

    51,806
    RFQ
    DMP2200UDW-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 900mA 260mOhm @ 880mA, 4.5V 1.2V @ 250µA 2.1nC @ 4.5V 184pF @ 10V 450mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    BSS84AKS,115

    BSS84AKS,115

    MOSFET 2P-CH 50V 0.16A 6TSSOP

    Nexperia USA Inc.

    29,473
    RFQ
    BSS84AKS,115

    Tabla de datos

    TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 50V 160mA 7.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.35nC @ 5V 36pF @ 25V 445mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSSOP
    2N7002PV,115

    2N7002PV,115

    MOSFET 2N-CH 60V 0.35A SOT666

    Nexperia USA Inc.

    22,576
    RFQ
    2N7002PV,115

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 350mA 1.6Ohm @ 500mA, 10V 2.4V @ 250µA 0.8nC @ 4.5V 50pF @ 10V 330mW 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-666
    DMC3401LDW-7

    DMC3401LDW-7

    MOSFET N/P-CH 30V 0.8A SOT363

    Diodes Incorporated

    3,087
    RFQ
    DMC3401LDW-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 800mA (Ta), 550mA (Ta) 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V 1.6V @ 250µA, 2.6V @ 250µA 1.2nC @ 10V, 800pC @ 10V 50pF @ 15V, 19pF @ 15V 290mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    BSS138PS,115

    BSS138PS,115

    MOSFET 2N-CH 60V 0.32A 6TSSOP

    Nexperia USA Inc.

    309,758
    RFQ
    BSS138PS,115

    Tabla de datos

    TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 320mA 1.6Ohm @ 300mA, 10V 1.5V @ 250µA 0.8nC @ 4.5V 50pF @ 10V 420mW 150°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSSOP
    SSM6L36FE,LM

    SSM6L36FE,LM

    MOSFET N/P-CH 20V 0.5A ES6

    Toshiba Semiconductor and Storage

    39,399
    RFQ
    SSM6L36FE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 500mA, 330mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
    DMN601VK-7

    DMN601VK-7

    MOSFET 2N-CH 60V 0.305A SOT563

    Diodes Incorporated

    32,269
    RFQ

    -

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 305mA 2Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 250mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-563
    TSM2N7002AKDCU6 RFG

    TSM2N7002AKDCU6 RFG

    MOSFET 2N-CH 60V 0.22A SOT363

    Taiwan Semiconductor Corporation

    14,740
    RFQ
    TSM2N7002AKDCU6 RFG

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 220mA (Ta) 2.5Ohm @ 220mA, 10V 2.5V @ 250µA 0.91nC @ 4.5V 30pF @ 30V 240mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SSM6N43FU,LF

    SSM6N43FU,LF

    MOSFET 2N-CH 20V 0.5A US6

    Toshiba Semiconductor and Storage

    8,860
    RFQ
    SSM6N43FU,LF

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 500mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 200mW 150°C (TJ) - - Surface Mount US6
    SSM6N56FE,LM

    SSM6N56FE,LM

    MOSFET 2N-CH 20V 0.8A ES6

    Toshiba Semiconductor and Storage

    34,922
    RFQ
    SSM6N56FE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 800mA 235mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
    DMN62D0UDW-7

    DMN62D0UDW-7

    MOSFET 2N-CH 60V 0.35A SOT363

    Diodes Incorporated

    19,695
    RFQ
    DMN62D0UDW-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 350mA 2Ohm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 32pF @ 30V 320mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMN3190LDW-13

    DMN3190LDW-13

    MOSFET 2N-CH 30V 1A SOT363

    Diodes Incorporated

    11,866
    RFQ
    DMN3190LDW-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 1A 190mOhm @ 1.3A, 10V 2.8V @ 250µA 2nC @ 10V 87pF @ 20V 320mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMN3190LDW-7

    DMN3190LDW-7

    MOSFET 2N-CH 30V 1A SOT363

    Diodes Incorporated

    10,375
    RFQ
    DMN3190LDW-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 1A 190mOhm @ 1.3A, 10V 2.8V @ 250µA 2nC @ 10V 87pF @ 20V 320mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    NX3008NBKSH

    NX3008NBKSH

    MOSFET 2N-CH 30V 0.35A 6TSSOP

    Nexperia USA Inc.

    5,703
    RFQ
    NX3008NBKSH

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 350mA (Ta) 1.4Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68nC @ 4.5V 50pF @ 15V 445mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSSOP
    BSS138BKS,115

    BSS138BKS,115

    MOSFET 2N-CH 60V 0.32A 6TSSOP

    Nexperia USA Inc.

    390,421
    RFQ
    BSS138BKS,115

    Tabla de datos

    TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 320mA 1.6Ohm @ 320mA, 10V 1.6V @ 250µA 0.7nC @ 4.5V 56pF @ 10V 445mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSSOP
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