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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    DMN601DWK-7

    DMN601DWK-7

    MOSFET 2N-CH 60V 0.305A SOT363

    Diodes Incorporated

    472,241
    RFQ
    DMN601DWK-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 305mA 2Ohm @ 500mA, 10V 2.5V @ 1mA - 50pF @ 25V 200mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMC2004DWK-7

    DMC2004DWK-7

    MOSFET N/P-CH 20V 0.54A SOT363

    Diodes Incorporated

    251,997
    RFQ
    DMC2004DWK-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 540mA, 430mA 550mOhm @ 540mA, 4.5V 1V @ 250µA - 150pF @ 16V 250mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMG1029SVQ-7

    DMG1029SVQ-7

    MOSFET N/P-CH 60V 0.5A SOT563

    Diodes Incorporated

    5,139
    RFQ
    DMG1029SVQ-7

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 60V 500mA (Ta), 360mA (Ta) 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V 2.5V @ 250µA, 3V @ 250µA 0.3nC @ 4.5V, 0.28nC @ 4.5V 30pF @ 25V, 25pF @ 25V 450mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    BSS8402DW-7-F

    BSS8402DW-7-F

    MOSFET N/P-CH 60V/50V SOT363

    Diodes Incorporated

    36,353
    RFQ
    BSS8402DW-7-F

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V, 50V 115mA, 130mA 7.5Ohm @ 50mA, 5V 2.5V @ 250µA - 50pF @ 25V, 45pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    EM6K6T2R

    EM6K6T2R

    MOSFET 2N-CH 20V 0.3A EMT6

    Rohm Semiconductor

    5,795
    RFQ
    EM6K6T2R

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 300mA 1Ohm @ 300mA, 4V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    EM6K33T2R

    EM6K33T2R

    MOSFET 2N-CH 50V 0.2A EMT6

    Rohm Semiconductor

    38,646
    RFQ
    EM6K33T2R

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    DMN2019UTS-13

    DMN2019UTS-13

    MOSFET 2N-CH 20V 5.4A 8TSSOP

    Diodes Incorporated

    23,492
    RFQ
    DMN2019UTS-13

    Tabla de datos

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.4A 18.5mOhm @ 7A, 10V 950mV @ 250µA 8.8nC @ 4.5V 143pF @ 10V 780mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SSM6N357R,LF

    SSM6N357R,LF

    MOSFET 2N-CH 60V 0.65A 6TSOPF

    Toshiba Semiconductor and Storage

    10,059
    RFQ
    SSM6N357R,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 650mA (Ta) 1.8Ohm @ 150mA, 5V 2V @ 1mA 1.5nC @ 5V 60pF @ 12V 1.5W (Ta) 150°C - - Surface Mount 6-TSOP-F
    PJS6809_S1_00001

    PJS6809_S1_00001

    MOSFET 2P-CH 30V 2.6A SOT23-6

    Panjit International Inc.

    1,561
    RFQ
    PJS6809_S1_00001

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 2.6A (Ta) 115mOhm @ 2.6A, 10V 2.1V @ 250µA 9.8nC @ 10V 396pF @ 15V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    SSM6N62TU,LF

    SSM6N62TU,LF

    MOSFET 2N-CH 20V 0.8A UF6

    Toshiba Semiconductor and Storage

    15,023
    RFQ
    SSM6N62TU,LF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 800mA (Ta) 85mOhm @ 800mA, 4.5V 1V @ 1mA 2nC @ 4.5V 177pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
    DMN2029USD-13

    DMN2029USD-13

    MOSFET 2N-CH 20V 5.8A 8SO

    Diodes Incorporated

    12,783
    RFQ
    DMN2029USD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5.8A 25mOhm @ 6.5A, 4.5V 1.5V @ 250µA 18.6nC @ 8V 1171pF @ 10V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    DMN3032LFDB-7

    DMN3032LFDB-7

    MOSFET 2N-CH 30V 6.2A 6UDFN

    Diodes Incorporated

    8,097
    RFQ
    DMN3032LFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6.2A 30mOhm @ 5.8A, 10V 2V @ 250µA 10.6nC @ 10V 500pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMP2240UDM-7

    DMP2240UDM-7

    MOSFET 2P-CH 20V 2A SOT26

    Diodes Incorporated

    185,123
    RFQ

    -

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2A 150mOhm @ 2A, 4.5V 1V @ 250µA - 320pF @ 16V 600mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-26
    DMN601DMK-7

    DMN601DMK-7

    MOSFET 2N-CH 60V 0.51A SOT26

    Diodes Incorporated

    52,387
    RFQ

    -

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 510mA 2.4Ohm @ 200mA, 10V 2.5V @ 1mA 0.304nC @ 4.5V 50pF @ 25V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
    NTUD3169CZT5G

    NTUD3169CZT5G

    MOSFET N/P-CH 20V 0.22A SOT963

    onsemi

    46,147
    RFQ
    NTUD3169CZT5G

    Tabla de datos

    - SOT-963 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 220mA, 200mA 1.5Ohm @ 100mA, 4.5V 1V @ 250µA - 12.5pF @ 15V 125mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-963
    SI1926DL-T1-E3

    SI1926DL-T1-E3

    MOSFET 2N-CH 60V 0.37A SC70-6

    Vishay Siliconix

    20,204
    RFQ
    SI1926DL-T1-E3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 370mA 1.4Ohm @ 340mA, 10V 2.5V @ 250µA 1.4nC @ 10V 18.5pF @ 30V 510mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    DMG9933USD-13

    DMG9933USD-13

    MOSFET 2P-CH 20V 4.6A 8SO

    Diodes Incorporated

    15,778
    RFQ
    DMG9933USD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.6A 75mOhm @ 4.8A, 4.5V 1.1V @ 250µA 6.5nC @ 4.5V 608.4pF @ 6V 1.15W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    EM6K7T2CR

    EM6K7T2CR

    MOSFET 2N-CH 20V 0.2A EMT6

    Rohm Semiconductor

    15,580
    RFQ
    EM6K7T2CR

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 200mA (Ta) 1.2Ohm @ 200mA, 2.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
    SI1922EDH-T1-GE3

    SI1922EDH-T1-GE3

    MOSFET 2N-CH 20V 1.3A SC70-6

    Vishay Siliconix

    15,145
    RFQ
    SI1922EDH-T1-GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.3A 198mOhm @ 1A, 4.5V 1V @ 250µA 2.5nC @ 8V - 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1967DH-T1-GE3

    SI1967DH-T1-GE3

    MOSFET 2P-CH 20V 1.3A SC70-6

    Vishay Siliconix

    10,427
    RFQ
    SI1967DH-T1-GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.3A 490mOhm @ 910mA, 4.5V 1V @ 250µA 4nC @ 8V 110pF @ 10V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
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