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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM120DUM11T3AG

    MSCSM120DUM11T3AG

    MOSFET 2N-CH 1200V 254A SP3F

    Microchip Technology

    3
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1067W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170HM45CT3AG

    MSCSM170HM45CT3AG

    MOSFET 4N-CH 1700V 64A

    Microchip Technology

    3
    RFQ
    MSCSM170HM45CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170DUM11T3AG

    MSCSM170DUM11T3AG

    MOSFET 2N-CH 1700V 240A SP3F

    Microchip Technology

    5
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1140W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM120TAM31CT3AG

    MSCSM120TAM31CT3AG

    MOSFET 6N-CH 1200V 89A SP3F

    Microchip Technology

    3
    RFQ
    MSCSM120TAM31CT3AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM120DUM08T3AG

    MSCSM120DUM08T3AG

    MOSFET 2N-CH 1200V 337A SP3F

    Microchip Technology

    3
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12100pF @ 1000V 1409W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170TLM23C3AG

    MSCSM170TLM23C3AG

    MOSFET 4N-CH 1700V 124A SP3F

    Microchip Technology

    6
    RFQ
    MSCSM170TLM23C3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170TAM45CT3AG

    MSCSM170TAM45CT3AG

    MOSFET 6N-CH 1700V 64A

    Microchip Technology

    16
    RFQ
    MSCSM170TAM45CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170AM15CT3AG

    MSCSM170AM15CT3AG

    MOSFET 2N-CH 1700V 181A

    Microchip Technology

    16
    RFQ
    MSCSM170AM15CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 862W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM08CT3AG

    MSCSM120AM08CT3AG

    MOSFET 2N-CH 1200V 337A SP3F

    Microchip Technology

    2
    RFQ
    MSCSM120AM08CT3AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 4mA 928nC @ 20V 12.08pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM70DUM025AG

    MSCSM70DUM025AG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    5
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1882W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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