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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM170DUM23T3AG

    MSCSM170DUM23T3AG

    MOSFET 2N-CH 1700V 124A SP3F

    Microchip Technology

    14
    RFQ

    -

    - Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM70HM19T3AG

    MSCSM70HM19T3AG

    MOSFET 4N-CH 700V 124A

    Microchip Technology

    7
    RFQ
    MSCSM70HM19T3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70DUM10T3AG

    MSCSM70DUM10T3AG

    MOSFET 2N-CH 700V 241A SP3F

    Microchip Technology

    4
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM70AM10T3AG

    MSCSM70AM10T3AG

    MOSFET 2N-CH 700V 241A

    Microchip Technology

    3
    RFQ
    MSCSM70AM10T3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DUM16T3AG

    MSCSM120DUM16T3AG

    MOSFET 2N-CH 1200V 173A SP3F

    Microchip Technology

    4
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170TLM45C3AG

    MSCSM170TLM45C3AG

    MOSFET 4N-CH 1700V 64A SP3F

    Microchip Technology

    6
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170DUM15T3AG

    MSCSM170DUM15T3AG

    MOSFET 2N-CH 1700V 181A SP3F

    Microchip Technology

    4
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 862W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM70TAM19T3AG

    MSCSM70TAM19T3AG

    MOSFET 6N-CH 700V 124A

    Microchip Technology

    5
    RFQ
    MSCSM70TAM19T3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM07T3AG

    MSCSM70AM07T3AG

    MOSFET 2N-CH 700V 353A

    Microchip Technology

    6
    RFQ
    MSCSM70AM07T3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70DUM07T3AG

    MSCSM70DUM07T3AG

    MOSFET 2N-CH 700V 353A SP3F

    Microchip Technology

    4
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
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