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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    G085C03D32

    G085C03D32

    MOSFET N/P-CH 30V 28A 8DFN

    Goford Semiconductor

    5,000
    RFQ
    G085C03D32

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 28A (Tc), 12A (Tc) 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V 2V @ 250µA 18nC @ 10V, 25nC @ 10V 1085pF @ 15V, 1352pF @ 15V 13W (Tc), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    G160N04S2

    G160N04S2

    MOSFET 2N-CH 40V 9A 8SOP

    Goford Semiconductor

    4,000
    RFQ
    G160N04S2

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 9A (Tc) 15mOhm @ 4A, 10V 2V @ 250µA 24nC @ 10V 989pF @ 20V 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    FDZ1827NZ

    FDZ1827NZ

    MOSFET 2N-CH 20V 10A 6WLCSP

    Fairchild Semiconductor

    20,000
    RFQ
    FDZ1827NZ

    Tabla de datos

    PowerTrench® 6-XFBGA, WLCSP Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 10A (Ta) 13mOhm @ 1A, 4.5V 1.2V @ 250µA 24nC @ 10V 2055pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1.3x2.3)
    G350N06D32

    G350N06D32

    MOSFET 2N-CH 60V 10A 8DFN

    Goford Semiconductor

    5,000
    RFQ
    G350N06D32

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 10A (Tc) 35mOhm @ 5A, 10V 2.5V @ 250µA 25nC @ 10V 1330pF @ 30V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    G170P02D32

    G170P02D32

    MOSFET P-CH 20V 20A DUAL DFN3*3-

    Goford Semiconductor

    5,000
    RFQ
    G170P02D32

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 20V 20A (Tc) 21mOhm @ 6A, 4.5V 1V @ 250µA 2.5nC @ 10V 2193pF @ 10V - -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    G4616

    G4616

    MOSFET N/P-CH 40V 8A/7A 8SOP

    Goford Semiconductor

    40,000
    RFQ
    G4616

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 40V 8A (Tc), 7A (Tc) 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V 2.5V @ 250µA 12nC @ 10V, 13nC @ 10V 415pF @ 20V, 520pF @ 20V 2W (Tc), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    NTEFD2KS26NTCG

    NTEFD2KS26NTCG

    NCH 12V 20A WLCSP DUAL

    onsemi

    1,360,000
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    UPA602T-T2-A

    UPA602T-T2-A

    MOSFET 2N-CH 50V 0.1A SC-59

    Renesas Electronics Corporation

    51,620
    RFQ
    UPA602T-T2-A

    Tabla de datos

    - SC-59-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 100mA 25Ohm @ 10mA, 10V 1.8V @ 1µA - 16pF @ 5V 300mW 150°C (TJ) - - Surface Mount SC-59
    G05NP06S2

    G05NP06S2

    MOSFET N/P-CH 60V 5A/3.1A 8SOP

    Goford Semiconductor

    28,000
    RFQ
    G05NP06S2

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 5A (Tc), 3.1A (Tc) 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V 2V @ 250µA, 2.2V @ 250µA 22nC @ 10V, 37nC @ 10V 1336pF @ 30V, 1454pF @ 30V 2.5W (Tc), 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    G05N06S2

    G05N06S2

    MOSFET 2N-CH 60V 5A 8SOP

    Goford Semiconductor

    20,000
    RFQ
    G05N06S2

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 5A (Tc) 35mOhm @ 5A, 4.5V 2.5V @ 250µA 26nC @ 10V 1374pF @ 30V 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    G1008B

    G1008B

    MOSFET 100V 8A 8SOP

    Goford Semiconductor

    4,000
    RFQ
    G1008B

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 100V 8A (Tc) 130mOhm @ 2A, 10V 3V @ 250µA 15.5nC @ 10V 690pF @ 25V 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    PMCM650CUNEZ

    PMCM650CUNEZ

    MOSFET 20V

    Nexperia USA Inc.

    45,000
    RFQ
    PMCM650CUNEZ

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    G170P03S2

    G170P03S2

    MOSFET P+P-CH 30V 11A SOP-8 DUAL

    Goford Semiconductor

    12,000
    RFQ
    G170P03S2

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 11A (Tc) 18mOhm @ 5A, 10V 2.5V @ 250µA 40nC @ -10V 1786pF @ -15V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    PHP225,118

    PHP225,118

    NEXPERIA PHP225 - SMALL SIGNAL F

    NXP Semiconductors

    4,434
    RFQ
    PHP225,118

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    G06NP06S2

    G06NP06S2

    MOSFET N/P-CH 60V 6A 8SOP

    Goford Semiconductor

    20,000
    RFQ
    G06NP06S2

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 6A (Tc) 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V 2.5V @ 250µA, 3.5V @ 250µA 22nC @ 10V, 25nC @ 10V 1350pF @ 30V, 2610pF @ 30V 2W (Tc), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    UPA2387T1P-E4-A

    UPA2387T1P-E4-A

    MOSFET

    Renesas Electronics Corporation

    80,000
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDML7610AS

    FDML7610AS

    DUAL N-CH. ER TRENCH MO

    onsemi

    27,000
    RFQ

    -

    * - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    ECH8662-TL-H

    ECH8662-TL-H

    ECH8662 - MOSFET 2 N-CHANNEL ARR

    onsemi

    3,000
    RFQ
    ECH8662-TL-H

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDC6304P

    FDC6304P

    MOSFET 2P-CH 25V 0.46A SSOT6

    Fairchild Semiconductor

    76,939
    RFQ
    FDC6304P

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 25V 460mA 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V 62pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    UPA1981TE-T1-A

    UPA1981TE-T1-A

    MOSFET N/P-CH 8V 2.8A SC95

    Renesas

    27,000
    RFQ
    UPA1981TE-T1-A

    Tabla de datos

    - SC-95 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 8V 2.8A (Ta) 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V 200mV @ 2.8A, 200mV @ 1.9A - - 1W (Ta) 150°C - - Surface Mount SC-95
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