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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    AUIRF7316QTR

    AUIRF7316QTR

    MOSFET 2P-CH 30V 8SOIC

    Infineon Technologies

    298
    RFQ
    AUIRF7316QTR

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V - 58mOhm @ 4.9A, 10V 3V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NTMFD4C85NT1G

    NTMFD4C85NT1G

    MOSFET 2N-CH 30V 15.4A 8DFN

    onsemi

    3,707
    RFQ
    NTMFD4C85NT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 15.4A, 29.7A 3mOhm @ 20A, 10V 2.1V @ 250µA 32nC @ 10V 1960pF @ 15V 1.13W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    FDMD8680

    FDMD8680

    MOSFET 2N-CH 80V 66A 8PWR 5X6

    onsemi

    1,412
    RFQ
    FDMD8680

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 66A (Tc) 4.7mOhm @ 16A, 10V 4V @ 250µA 73nC @ 10V 5330pF @ 40V 39W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power 5x6
    FS50UMJ-3

    FS50UMJ-3

    MOSFET N-CH 150V 50A

    Renesas Electronics Corporation

    845
    RFQ
    FS50UMJ-3

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDMD8560L

    FDMD8560L

    MOSFET 2N-CH 60V 22A 8PWR 5X6

    onsemi

    1,111
    RFQ
    FDMD8560L

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V 22A, 93A 3.2mOhm @ 22A, 10V 3V @ 250µA 128nC @ 10V 11130pF @ 30V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power 5x6
    FDMD86100

    FDMD86100

    MOSFET 2N-CH 100V 10A 8PWR 5X6

    onsemi

    486
    RFQ
    FDMD86100

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source - 100V 10A 10.5mOhm @ 10A, 10V 4V @ 250µA 30nC @ 10V 2060pF @ 50V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power 5x6
    EFC4C002NLTDG

    EFC4C002NLTDG

    MOSFET 2N-CH 8WLCSP

    onsemi

    4,750
    RFQ
    EFC4C002NLTDG

    Tabla de datos

    - 8-XFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate - - - 2.2V @ 1mA 45nC @ 4.5V 6200pF @ 15V 2.6W 150°C (TJ) - - Surface Mount 8-WLCSP (6x2.5)
    FDMS8095AC

    FDMS8095AC

    MOSFET N/P-CH 150V 6.2A/1A 8MLP

    onsemi

    3,000
    RFQ
    FDMS8095AC

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 150V 6.2A, 1A 30mOhm @ 6.2A, 10V 4V @ 250µA 30nC @ 10V 2020pF @ 75V, 230pF @ 75V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
    SLA5065

    SLA5065

    MOSFET 4N-CH 60V 7A 15ZIP

    Sanken Electric USA Inc.

    722
    RFQ
    SLA5065

    Tabla de datos

    - 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 4 N-Channel - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 4.8W 150°C (TJ) - - Through Hole 15-ZIP
    FD6M045N06

    FD6M045N06

    MOSFET 2N-CH 60V 60A EPM15

    Fairchild Semiconductor

    1,409
    RFQ
    FD6M045N06

    Tabla de datos

    Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 60A 4.5mOhm @ 40A, 10V 4V @ 250µA 87nC @ 10V 3890pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
    NTMFD5C462NLT1G

    NTMFD5C462NLT1G

    MOSFET 40V S08FL

    onsemi

    1,500
    RFQ
    NTMFD5C462NLT1G

    Tabla de datos

    - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
    SLA5068

    SLA5068

    MOSFET 6N-CH 60V 7A 15ZIP

    Sanken Electric USA Inc.

    352
    RFQ
    SLA5068

    Tabla de datos

    - 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
    FD6M043N08

    FD6M043N08

    MOSFET 2N-CH 75V 65A EPM15

    Fairchild Semiconductor

    1,404
    RFQ
    FD6M043N08

    Tabla de datos

    Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 75V 65A 4.3mOhm @ 40A, 10V 4V @ 250µA 148nC @ 10V 6180pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
    SD5401CY SOIC 14L ROHS

    SD5401CY SOIC 14L ROHS

    MOSFET 4N-CH 10V 0.05A 14SOIC

    Linear Integrated Systems, Inc.

    4,514
    RFQ
    SD5401CY SOIC 14L ROHS

    Tabla de datos

    SD5401 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 4 N-Channel - 10V 50mA (Ta) 75Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
    SD5400CY SOIC 14L ROHS

    SD5400CY SOIC 14L ROHS

    MOSFET 4N-CH 20V 0.05A 14SOIC

    Linear Integrated Systems, Inc.

    1,658
    RFQ
    SD5400CY SOIC 14L ROHS

    Tabla de datos

    SD5400 14-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 4 N-Channel - 20V 50mA (Ta) 75Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
    FX50SMJ-2#B00

    FX50SMJ-2#B00

    MOSFET P-CH

    Renesas Electronics Corporation

    5,980
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    SLA5064

    SLA5064

    MOSFET 3N/3P-CH 60V 10A 12SIP

    Sanken Electric USA Inc.

    972
    RFQ
    SLA5064

    Tabla de datos

    - 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 10A 140mOhm @ 5A, 4V - - 460pF @ 10V, 1200pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    SCX6206TQM/V2/NOPB

    SCX6206TQM/V2/NOPB

    MOSFET

    Texas Instruments

    1,319
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FAM65CR51XZ1

    FAM65CR51XZ1

    MOSFET 2N-CH 650V 64A APMCA-A16

    onsemi

    4,933
    RFQ
    FAM65CR51XZ1

    Tabla de datos

    - 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 64A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 463W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCA-A16
    FTCO3V455A1

    FTCO3V455A1

    MOSFET 6N-CH 40V 150A MODULE

    onsemi

    2,543
    RFQ
    FTCO3V455A1

    Tabla de datos

    SPM® 19-PowerDIP Module Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) Logic Level Gate 40V 150A 1.66mOhm @ 80A, 10V - - - 115W 175°C (TJ) - - Through Hole Module
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