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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    AMD560C-CT

    AMD560C-CT

    MOSFET N/P-CH 60V 35A TO252-4

    Analog Power Inc.

    2,000
    RFQ
    AMD560C-CT

    Tabla de datos

    * TO-252-5, DPAK (4 Leads + Tab), TO-252AD Strip Active MOSFET (Metal Oxide) N and P-Channel - 60V 35A (Tc), 20A (Tc) 24mOhm @ 20A, 10V, 85mOhm @ 10A, 10V 1V @ 250µA 9nC @ 4.5V, 10nC @ 4.5V 1422pF @ 15V, 1143pF @ 15V 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252-4
    AM7542C

    AM7542C

    MOSFET N/P-CH 40V 6.9A 8DFN

    Analog Power Inc.

    1,500
    RFQ
    AM7542C

    Tabla de datos

    - 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) N and P-Channel - 40V 6.9A (Ta), 6.6A (Ta) 39mOhm @ 6.6A, 10V 1V @ 250µA 10nC @ 4.5V, 15nC @ 4.5V 1506pF @ 15V, 1264pF @ 15V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    FDSS2407_SB82086

    FDSS2407_SB82086

    MOSFET N-CH

    Fairchild Semiconductor

    1,669
    RFQ
    FDSS2407_SB82086

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    CSD86356Q5D

    CSD86356Q5D

    MOSFET 25V

    Texas Instruments

    12,500
    RFQ
    CSD86356Q5D

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDPC8016S-B801

    FDPC8016S-B801

    Transistor MOSFET Array Dual N-C

    Flip Electronics

    125,104
    RFQ

    -

    - - Bulk Obsolete - - - - - - - - - - - - - - -
    HAT2218R0T-EL-E

    HAT2218R0T-EL-E

    MOSFET N-CH

    Renesas

    15,000
    RFQ
    HAT2218R0T-EL-E

    Tabla de datos

    - - Bulk Obsolete - - - - - - - - - - - - - - -
    UPA2756GR-E1-A

    UPA2756GR-E1-A

    MOSFET 2N-CH 60V 4A 8PWRSOP

    Renesas

    14,208
    RFQ
    UPA2756GR-E1-A

    Tabla de datos

    - 8-PowerSOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 4A (Ta) 105mOhm @ 2A, 10V 2.5V @ 1mA 6nC @ 10V 260pF @ 10V 2W (Ta) 150°C - - Surface Mount 8-PowerSOP
    FDMS3616S

    FDMS3616S

    SMALL SIGNAL FIELD-EFFECT TRANSI

    onsemi

    6,000
    RFQ
    FDMS3616S

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDMS3669S

    FDMS3669S

    MOSFET 2N-CH 30V 13A 8PQFN

    Fairchild Semiconductor

    1,778
    RFQ
    FDMS3669S

    Tabla de datos

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc) 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V 2.7V @ 250µA, 2.5V @ 1mA 24nC @ 10V, 34nC @ 10V 1605pF @ 15V, 2060pF @ 15V 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRF6802SDTRPBF

    IRF6802SDTRPBF

    IRF6802 - 12V-300V N-CHANNEL POW

    Infineon Technologies

    4,800
    RFQ
    IRF6802SDTRPBF

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDS6912

    FDS6912

    POWER FIELD-EFFECT TRANSISTOR, 6

    onsemi

    20,207
    RFQ
    FDS6912

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDMS3668S

    FDMS3668S

    MOSFET 2N-CH 30V 13A/18A 8PQFN

    Fairchild Semiconductor

    243,995
    RFQ
    FDMS3668S

    Tabla de datos

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 18A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1765pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    UPA2790GR-E1-AT

    UPA2790GR-E1-AT

    MOSFET N/P-CH 30V 6A 8SOP

    Renesas

    10,000
    RFQ
    UPA2790GR-E1-AT

    Tabla de datos

    - 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 6A (Ta) 28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V 2.5V @ 1mA 12.6nC @ 10V, 11nC @ 10V 500pF @ 10V, 460pF @ 10V 1.7W (Ta) 150°C - - Surface Mount 8-SOP
    FDMD8900

    FDMD8900

    MOSFET 2N-CH 30V 19A/17A 12POWER

    Fairchild Semiconductor

    15,000
    RFQ
    FDMD8900

    Tabla de datos

    - 12-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 19A, 17A 4mOhm @ 19A, 10V 2.5V @ 250µA 35nC @ 10V 2605pF @ 15V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
    AM7942N

    AM7942N

    MOSFET 2N-CH 40V 17A 8DFN

    Analog Power Inc.

    3,000
    RFQ
    AM7942N

    Tabla de datos

    - 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 40V 17A (Ta), 50A (Tc) 6mOhm @ 50A, 10V 1V @ 250µA 32nC @ 4.5V 3772pF @ 15V 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    NVMFD010N10MCLT1G

    NVMFD010N10MCLT1G

    MOSFET 2N-CH 100V 11.6A 8DFN

    onsemi

    9,000
    RFQ

    -

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    FDMS3602AS

    FDMS3602AS

    MOSFET 2N-CH 25V 15A/26A 8PQFN

    Fairchild Semiconductor

    9,000
    RFQ
    FDMS3602AS

    Tabla de datos

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 15A, 26A 5.6mOhm @ 15A, 10V 3V @ 250µA 27nC @ 10V 1770pF @ 13V 2.2W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    AM3531C

    AM3531C

    MOSFET N/P-CH 30V TSOP-6

    Analog Power Inc.

    3,000
    RFQ

    -

    - SOT-23-6 Thin, TSOT-23-6 Bulk Active MOSFET (Metal Oxide) N and P-Channel - 30V 3.7A (Ta), 2.7A (Ta) 58mOhm @ 2A, 4.5V, 112mOhm @ 2A, 4.5V 500mV @ 250µA 8.7nC @ 4.5V, 9.3nC @ 4.5V 641pF @ 15V, 630pF @ 15V 1.15W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    AM4536C

    AM4536C

    MOSFET N/P-CH 30V 7.1A 8SO

    Analog Power Inc.

    1,400
    RFQ
    AM4536C

    Tabla de datos

    - PowerPAK® SO-8 Bulk Active MOSFET (Metal Oxide) N and P-Channel - 30V 7.1A (Ta), 6A (Ta) 28mOhm @ 5.7A, 10V, 39mOhm @ 4.8A, 10V 1V @ 250µA 5.8nC @ 4.5V, 19nC @ 4.5V 519pF @ 15V, 597pF @ 15V 2.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    NTMFD0D9N02P1E

    NTMFD0D9N02P1E

    MOSFET 2N-CH 30V/25V 14A 8PQFN

    onsemi

    161,223
    RFQ

    -

    - 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC @ 4.5V, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
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