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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SQJQ960EL-T1_GE3

    SQJQ960EL-T1_GE3

    MOSFET 2N-CH 60V 63A PPAK8X8

    Vishay Siliconix

    1,362
    RFQ
    SQJQ960EL-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 63A (Tc) 9mOhm @ 10A, 10V 2.5V @ 250µA 24nC @ 10V 1950pF @ 25V 71W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
    BSG0811NDATMA1

    BSG0811NDATMA1

    MOSFET 2N-CH 25V 19A/41A TISON8

    Infineon Technologies

    6,082
    RFQ
    BSG0811NDATMA1

    Tabla de datos

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 4.5V Drive 25V 19A, 41A 3mOhm @ 20A, 10V 2V @ 250µA 8.4nC @ 4.5V 1100pF @ 12V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount PG-TISON-8
    SQ3585EV-T1_GE3

    SQ3585EV-T1_GE3

    MOSFET N/P-CH 20V 3.57A 6TSOP

    Vishay Siliconix

    6,894
    RFQ
    SQ3585EV-T1_GE3

    Tabla de datos

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 20V 3.57A (Tc), 2.5A (Tc) 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V 1.5V @ 250µA 2.5nC @ 4.5V, 3.5nC @ 4.5V - 1.67W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    CSD86350Q5D

    CSD86350Q5D

    MOSFET 2N-CH 25V 40A 8LSON

    Texas Instruments

    4,190
    RFQ
    CSD86350Q5D

    Tabla de datos

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 25V 40A 6mOhm @ 20A, 8V 2.1V @ 250µA 10.7nC @ 4.5V 1870pF @ 12.5V 13W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    FDS89141

    FDS89141

    MOSFET 2N-CH 100V 3.5A 8SOIC

    onsemi

    21,070
    RFQ
    FDS89141

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 3.5A 62mOhm @ 3.5A, 10V 4V @ 250µA 7.1nC @ 10V 398pF @ 50V 1.6W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI7234DP-T1-GE3

    SI7234DP-T1-GE3

    MOSFET 2N-CH 12V 60A PPAK SO8

    Vishay Siliconix

    10,827
    RFQ
    SI7234DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 12V 60A 3.4mOhm @ 20A, 4.5V 1.5V @ 250µA 120nC @ 10V 5000pF @ 6V 46W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7956DP-T1-GE3

    SI7956DP-T1-GE3

    MOSFET 2N-CH 150V 2.6A PPAK SO8

    Vishay Siliconix

    4,330
    RFQ
    SI7956DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 150V 2.6A 105mOhm @ 4.1A, 10V 4V @ 250µA 26nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    FDMQ86530L

    FDMQ86530L

    MOSFET 4N-CH 60V 8A 12MLP

    onsemi

    4,411
    RFQ
    FDMQ86530L

    Tabla de datos

    GreenBridge™ PowerTrench® 12-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) Logic Level Gate 60V 8A 17.5mOhm @ 8A, 10V 3V @ 250µA 33nC @ 10V 2295pF @ 30V 1.9W -55°C ~ 150°C (TJ) - - Surface Mount 12-MLP (5x4.5)
    CSD88584Q5DC

    CSD88584Q5DC

    MOSFET 2N-CH 40V 22VSON-CLIP

    Texas Instruments

    1,308
    RFQ
    CSD88584Q5DC

    Tabla de datos

    NexFET™ 22-PowerTFDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V - 0.95mOhm @ 30A, 10V 2.3V @ 250µA 88nC @ 4.5V 12400pF @ 20V 12W -55°C ~ 150°C (TJ) - - Surface Mount 22-VSON-CLIP (5x6)
    CSD88599Q5DC

    CSD88599Q5DC

    MOSFET 2N-CH 60V 22VSON-CLIP

    Texas Instruments

    2,955
    RFQ
    CSD88599Q5DC

    Tabla de datos

    NexFET™ 22-PowerTFDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V - 2.1mOhm @ 30A, 10V 2.5V @ 250µA 27nC @ 4.5V 4840pF @ 30V 12W -55°C ~ 150°C (TJ) - - Surface Mount 22-VSON-CLIP (5x6)
    NVMFD5C650NLWFT1G

    NVMFD5C650NLWFT1G

    MOSFET 2N-CH 60V 21A 8DFN

    onsemi

    1,500
    RFQ
    NVMFD5C650NLWFT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 21A (Ta), 111A (Tc) 4.2mOhm @ 20A, 10V 2.2V @ 98µA 16nC @ 4.5V 2546pF @ 25V 3.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    ALD1106SBL

    ALD1106SBL

    MOSFET 4N-CH 10.6V 14SOIC

    Advanced Linear Devices Inc.

    1,005
    RFQ
    ALD1106SBL

    Tabla de datos

    - 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
    FDMS8090

    FDMS8090

    MOSFET 2N-CH 100V 10A 8MLP

    onsemi

    1,042
    RFQ
    FDMS8090

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 10A 13mOhm @ 10A, 10V 4V @ 250µA 27nC @ 10V 1800pF @ 50V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
    ALD1106PBL

    ALD1106PBL

    MOSFET 4N-CH 10.6V 14PDIP

    Advanced Linear Devices Inc.

    492
    RFQ
    ALD1106PBL

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
    EPC2103

    EPC2103

    MOSFET 2N-CH 80V 28A DIE

    EPC

    5,410
    RFQ
    EPC2103

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 28A 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    NXH010P120MNF1PNG

    NXH010P120MNF1PNG

    MOSFET 2N-CH 1200V 114A

    onsemi

    35
    RFQ
    NXH010P120MNF1PNG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    CAB016M12FM3

    CAB016M12FM3

    MOSFET 2N-CH 1200V 78A

    Wolfspeed, Inc.

    7
    RFQ
    CAB016M12FM3

    Tabla de datos

    WolfPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 78A 21.3mOhm @ 80A, 15V 3.6V @ 23mA 236nC @ 15V 6600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    CCB032M12FM3

    CCB032M12FM3

    MOSFET 6N-CH 1200V 40A

    Wolfspeed, Inc.

    43
    RFQ
    CCB032M12FM3

    Tabla de datos

    WolfPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 40A 42.6mOhm @ 30A, 15V 3.6V @ 11.5mA 118nC @ 15V 3400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    CBB021M12FM3T

    CBB021M12FM3T

    MOSFET 4N-CH 1200V 50A

    Wolfspeed, Inc.

    32
    RFQ
    CBB021M12FM3T

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 50A (Tj) 28.9mOhm @ 30A, 15V 3.9V @ 17mA 162nC @ 15V 5400pF @ 1000V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH003P120M3F2PTHG

    NXH003P120M3F2PTHG

    MOSFET 2N-CH 1200V 350A 36PIM

    onsemi

    83
    RFQ
    NXH003P120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 350A (Tc) 5mOhm @ 200A, 18V 4.4V @ 160mA 1195nC @ 20V 20889pF @ 800V 979W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    Total 5737 Record«Prev1... 678910111213...287Next»
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