Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RB208RSM15STL1150V 15A, TO-277A, ULTRA LOW SBD |
4,000 |
|
![]() Tabla de datos |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 15A | 880 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | - | - | Surface Mount | TO-277A | 175°C |
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NRVTS30120MFST3GDIODE SCHOTTKY 120V 30A 5DFN |
4,304 |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | Schottky | 120 V | 30A | 950 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 120 V | 1470pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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DSC08C065D1-13SILICON CARBIDE RECTIFIER TO252 |
2,495 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | 278pF @ 100mV, 1MHz | - | - | Surface Mount | TO-252 (Type WX) | -55°C ~ 175°C |
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FFSP0665BDIODE SIL CARB 650V 8A TO220-2 |
483 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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DST2060DJFDIODE SCHOTTKY 60V 20A 8DFN |
14,843 |
|
![]() Tabla de datos |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | Schottky | 60 V | 20A | 750 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | - | - | - | Surface Mount | 8-PDFN (5x6) | -55°C ~ 150°C |
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PSDP3060L1_T0_00001TO-220AC, FAST |
3,935 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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VS-6EWH06FNTRHM3DIODE GEN PURP 600V 6A D-PAK |
2,000 |
|
![]() Tabla de datos |
FRED Pt® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 600 V | 6A | 2.1 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 50 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) | -65°C ~ 175°C |
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YQ12RSM10SDTFTL1TRENCH MOS STRUCTURE, 100V, 12A |
4,000 |
|
![]() Tabla de datos |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 12A | 670 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
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TRS4E65H,S1QG3 SIC-SBD 650V 4A TO-220-2L |
341 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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SE30DT12HM3/IDIODE GEN PURP 1.2KV 30A SMPD |
1,243 |
|
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eSMP® | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Active | Standard | 1200 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | 3.4 µs | 10 µA @ 1200 V | 132pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | SMPD | -55°C ~ 175°C |
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SDS065J004D3-ISARHDIODE 650V-4A TO220-2L |
150 |
|
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Sanan TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 12 µA @ 650 V | 213pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
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UF1008F_T0_00001ITO-220AC, ULTRA |
1,738 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 800 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 50pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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SIT08C065DIODE SIL CARB 650V 8A TO220AC |
1,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
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YQ20NL10SDTLTRENCH MOS STRUCTURE, 100V, 20A |
988 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 100 V | 20A | 960 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
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P2500XDIODE AVALANCHE 1800V 25A P600 |
940 |
|
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- | P600, Axial | Cut Tape (CT) | Active | Avalanche | 1800 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1800 V | - | - | - | Through Hole | P-600 | -50°C ~ 175°C |
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VS-30ETH06STRR-M3DIODE GEN PURP 600V 30A TO263AB |
4,542 |
|
![]() Tabla de datos |
FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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YQ15RSM10SDTFTL1TRENCH MOS STRUCTURE, 100V, 15A |
3,328 |
|
![]() Tabla de datos |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 15A | 680 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
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FFSH1065B-F155650V 10A SIC SBD GEN 1.5 |
153 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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VS-20ATS12HM3DIODE GEN PURP 1.2KV 20A TO220-3 |
975 |
|
![]() Tabla de datos |
- | TO-220-3 | Tube | Active | Standard | 1200 V | 20A | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-220-3 | -40°C ~ 150°C |
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SDS120J002C3-ISATHDIODE 1200V-2A TO220-2L |
169 |
|
![]() Tabla de datos |
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 11A | 1.5 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 8 µA @ 1200 V | 165pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |