Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CRU24730-600 SLRECTIFIER-ULTRA FAST <100 |
1,440 |
|
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MBR30170MFST3GDIODE SCHOTTKY 170V 30A 5DFN |
5,000 |
|
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- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | Schottky | 170 V | 30A | 890 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 170 V | 821pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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TRS6V65H,LQG3 SIC-SBD 650V 6A DFN8X8 |
4,803 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
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FESF16JTHE3_A/PDIODE GEN PURP 600V 16A ITO220AC |
1,995 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 16A | 1.5 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -65°C ~ 150°C |
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SF3006PTDIODE GEN PURP 400V 30A TO247AD |
806 |
|
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- | TO-247-3 | Tube | Active | Standard | 400 V | 30A | 1.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 175pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |
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YQ30NL10SETLTRENCH MOS STRUCTURE, 100V, 30A, |
990 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 100 V | 30A | 860 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
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VS-EPH3007L-N3DIODE GEN PURP 650V 30A TO247AD |
390 |
|
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- | TO-247-2 | Tube | Active | Standard | 650 V | 30A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 37 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-EPU3006LHN3DIODE GEN PURP 600V 30A TO247AD |
499 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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TRS6E65H,S1QG3 SIC-SBD 650V 6A TO-220-2L |
194 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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BSDH08G65E2DIODE SCHOT SIC 650V 8A TO220-2 |
3,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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VS-25ETS08S-M3DIODE GEN PURP 800V 25A TO263AB |
7,049 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 800 V | 25A | 1.14 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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SDS065J006D3-ISARHDIODE 650V-6A TO252-2L |
200 |
|
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Sanan TO263 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
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VS-20ETF06STRL-M3DIODE GEN PURP 600V 20A TO263AB |
6,202 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
IDW50E60FKSA1DIODE GEN PURP 600V 80A TO247-3 |
240 |
|
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- | TO-247-3 | Tube | Active | Standard | 600 V | 80A | 2 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
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FFSB0665BDIODE SIL CARB 650V 8A D2PAK-2 |
712 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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SDS065J010N3-ISATHDIODE 650V-10A TO220N-2L |
290 |
|
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Sanan TO220N | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 26A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Through Hole | TO-220N-2L | -55°C ~ 175°C |
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BSDD06G65E2DIODE SIC 650V 6A TO252 |
4,963 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 650 V | 201pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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SDS065J006C3-ISATHDIODE 650V-6A TO220-2L |
200 |
|
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Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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VS-8EWS12STRL-M3DIODE GEN PURP 1.2KV 8A D-PAK |
2,900 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 1200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
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SDS065J006E3-ISARHDIODE 650V-6A TO263-2L |
200 |
|
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Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |