Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STPSC20065DDIODE SIL CARB 650V 20A TO220AC |
975 |
|
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ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 650 V | 1250pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
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IDH16G65C5XKSA2DIODE SIL CARB 650V 16A TO220-1 |
1,984 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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VS-1N3890RDIODE GEN PURP 100V 12A DO203AA |
181 |
|
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
|
1N5553DIODE GEN PURP 800V 3A AXIAL |
251 |
|
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- | B, Axial | Bulk | Active | Standard | 800 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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FFSD10120ADIODE SIL CARBIDE 1.2KV TO252AA |
1,706 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | - | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | - | - | Surface Mount | TO-252AA | - |
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1N5551USDIODE GEN PURP 400V 3A D-5B |
165 |
|
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- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
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IDH12SG60CXKSA2DIODE SIL CARB 600V 12A TO220-1 |
396 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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VS-3C20ET07T-M3650 V POWER SIC GEN 3 MERGED PIN |
788 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 845pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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STPSC20065DIDIODE SIC 650V 20A TO220AC INS |
599 |
|
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ECOPACK®2 | TO-220-2 Insulated, TO-220AC | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 650 V | 1250pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC ins | -40°C ~ 175°C |
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MSC030SDA070BDIODE SIL CARBIDE 700V 60A TO247 |
118 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 60A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 1200pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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DSP45-18ADIODE GEN PURP 1.8KV 45A TO247 |
5,823 |
|
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- | TO-247-3 | Tube | Active | Standard | 1800 V | 45A | 1.26 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1800 V | 18pF @ 400V, 1MHz | - | - | Through Hole | TO-247 (IXTH) | -40°C ~ 175°C |
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FFSP3065BDIODE SIL CARB 650V 30A TO220-2 |
1,216 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1280pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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VS-40EPF02-M3DIODE GP 200V 40A TO247AC |
466 |
|
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- | TO-247-2 | Tube | Active | Standard | 200 V | 40A | 1.25 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 200 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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IDH16G120C5XKSA1DIODE SIL CARB 1.2KV 16A TO220-1 |
243 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 16A | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 730pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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C3D16065ADIODE SIL CARB 650V 39A TO220-2 |
1,048 |
|
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Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 39A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 95 µA @ 650 V | 878pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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VS-80APS08-M3DIODE GEN PURP 800V 80A TO247AC |
1,237 |
|
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- | TO-247-3 | Tube | Active | Standard | 800 V | 80A | 1.17 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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DSEI60-10ADIODE GEN PURP 1KV 60A TO247AD |
287 |
|
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- | TO-247-2 | Tube | Active | Standard | 1000 V | 60A | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 3 mA @ 1000 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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S4D20120HDIODE SIL CARB 1.2KV 20A TO247AC |
300 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 721pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
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IDK16G120C5XTMA1DIODE SIL CARB 1.2KV 40A TO263-1 |
437 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | - | 80 µA @ 1200 V | 730pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
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SCS215AJTLLDIODE SIL CARB 650V 15A TO263AB |
3,996 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB | 175°C (Max) |