Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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C6D10065GDIODE SIL CARB 650V 36A TO263-2 |
253 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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FFSP2065B-F085DIODE SIL CARB 650V 20A TO220-2 |
660 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
DSA1-18DDIODE AVALANCHE 1.8KV 2.3A |
262 |
|
![]() Tabla de datos |
- | Radial | Bulk | Active | Avalanche | 1800 V | 2.3A | 1.34 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 700 µA @ 1800 V | - | - | - | Through Hole | - | -40°C ~ 150°C |
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FFSD2065BDIODE SIL CARB 650V 23.4A DPAK |
1,771 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 23.4A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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IDK10G120C5XTMA1DIODE SIC 1.2KV 31.9A TO263-1 |
835 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.9A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 525pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
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DSEI30-12ADIODE GEN PURP 1.2KV 26A TO247AD |
205 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 26A | 2.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 750 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDW12G65C5XKSA1DIODE SIL CARB 650V 12A TO247-3 |
268 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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IDH12G65C5XKSA2DIODE SIL CARB 650V 12A TO220-1 |
850 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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STPSC15H12DDIODE SIL CARB 1.2KV 15A TO220AC |
2,768 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 1200 V | 1200pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
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1N5806E3DIODE GEN PURP 150V 1A A AXIAL |
123 |
|
![]() Tabla de datos |
- | Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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APT60D100BGDIODE GEN PURP 1KV 60A TO247 |
839 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 250 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
STBR6012WDIODE GEN PURP 1.2KV 60A DO247 |
516 |
|
![]() Tabla de datos |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 1200 V | 60A | 1.3 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | - | - | - | Through Hole | DO-247 | 175°C (Max) |
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DHG30I1200HADIODE GEN PURP 1.2KV 30A TO247 |
300 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 2.26 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247 | -55°C ~ 150°C |
|
C3D10065IDIODE SIL CARB 650V 19A TO220-2 |
1,325 |
|
![]() Tabla de datos |
Z-Rec® | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 19A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 480pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 Isolated Tab | -55°C ~ 175°C |
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STTH6012WLDIODE GP 1.2KV 60A DO247 LL |
946 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.25 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 30 µA @ 1200 V | - | - | - | Through Hole | DO-247 LL | 175°C |
|
STBR6012WYDIODE GEN PURP 1.2KV 60A DO247 |
112 |
|
![]() Tabla de datos |
ECOPACK®2 | DO-247-2 (Straight Leads) | Tube | Active | Standard | 1200 V | 60A | 1.3 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 | -40°C ~ 175°C |
|
STBR6008WYDIODE GEN PURP 800V 60A DO247 |
510 |
|
![]() Tabla de datos |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 800 V | 60A | 1.1 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 | -40°C ~ 175°C |
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GD30MPS06HDIODE SIL CARB 650V 49A TO247-2 |
614 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 49A | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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VS-HFA25PB60-N3DIODE GP 600V 25A TO247AC |
385 |
|
![]() Tabla de datos |
HEXFRED® | TO-247-2 | Tube | Active | Standard | 600 V | 25A | 1.7 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 20 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
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IDD10SG60CXTMA2DIODE SIL CARB 600V 10A TO252-3 |
217 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |