Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-35EPF12LHM3DIODE GEN PURP 1.2KV 35A TO247AD |
169 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 35A | 1.47 V @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |
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MSC010SDA120BDIODE SIL CARB 1.2KV 10A TO247 |
1,511 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
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JAN1N5552DIODE GEN PURP 600V 3A AXIAL |
152 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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SCS210AGC17DIODE SIC 650V 10A TO220ACFP |
1,918 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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STTH3006PIDIODE GEN PURP 600V 30A DOP3I |
444 |
|
![]() Tabla de datos |
- | DOP3I-2 Insulated (Straight Leads) | Tube | Active | Standard | 600 V | 30A | 1.85 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 25 µA @ 600 V | - | - | - | Through Hole | DOP3I | 175°C (Max) |
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VS-E5PH6012LHN3DIODE GEN PURP 1.2KV 60A TO247AD |
334 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-E5PH6012L-N3DIODE GEN PURP 1.2KV 60A TO247AD |
113 |
|
![]() Tabla de datos |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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S4D08120EDIODE SIL CARBIDE 1.2KV 8A DPAK |
2,606 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 560pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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SCS206AGC17DIODE SIL CARB 650V 6A TO220ACFP |
638 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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VS-E5PX6012L-N3DIODE GEN PURP 1.2KV 60A TO247AD |
165 |
|
![]() Tabla de datos |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 3.15 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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1N5619DIODE GEN PURP 600V 1A AXIAL |
301 |
|
![]() Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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VS-40EPS08-M3DIODE GP 800V 40A TO247AC |
678 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 800 V | 40A | 1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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VS-65PQ015-N3DIODE SCHOTTKY 15V 65A TO247AC |
103 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | Schottky | 15 V | 65A | 500 mV @ 65 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18 mA @ 15 V | - | - | - | Through Hole | TO-247AC | -55°C ~ 125°C |
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VS-E5PH7512L-N3DIODE GEN PURP 1.2KV 75A TO247AD |
3,490 |
|
![]() Tabla de datos |
FRED Pt® Gen 5 | TO-247-2 | Tube | Active | Standard | 1200 V | 75A | 2.6 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 145 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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RRD20TJ10SGC9DIODE GEN PURP 1KV 20A TO220ACFP |
219 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 20A | 1.05 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | - | - | Through Hole | TO-220ACFP | 150°C |
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C3D06065EDIODE SIL CARB 650V 20A TO252-2 |
1,387 |
|
![]() Tabla de datos |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Not For New Designs | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 295pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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IDH08SG60CXKSA2DIODE SIL CARB 600V 8A TO220-2-1 |
1,662 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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VS-30EPF12-M3DIODE GP 1.2KV 30A TO247AC |
443 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 1.41 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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VS-30EPF06-M3DIODE GP 600V 30A TO247AC |
500 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 1.41 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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C6D10065G-TRDIODE SIL CARB 650V 36A TO263-2 |
1,525 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |