Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JAN1N5712UB/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
2,334 |
|
![]() Tabla de datos |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 16 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | UB | -65°C ~ 150°C |
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JANKCE1N5804DIODE GEN PURP 100V 1A DIE Microchip Technology |
3,768 |
|
- |
- | Die | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
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JANKCE1N5802DIODE GEN PURP 50V 1A DIE Microchip Technology |
3,834 |
|
- |
- | Die | Tape & Reel (TR) | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
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JANS1N6643DIODE GEN PURP 50V 300MA D-5D Microchip Technology |
3,825 |
|
- |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 150 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
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1N3646DIODE GP 1.75KV 250MA S AXIAL Microchip Technology |
4,208 |
|
![]() Tabla de datos |
- | S, Axial | Bulk | Active | Standard | 1750 V | 250mA | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1750 V | - | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
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1N5711UBDDIODE SCHOTTKY 50V UB Microchip Technology |
4,223 |
|
- |
- | 4-SMD, No Lead | Bulk | Active | Schottky | 50 V | - | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | UB | -65°C ~ 150°C |
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1N5802URSDIODE GEN PURP 60V 1A A SQ-MELF Microchip Technology |
2,832 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 60 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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1N5806URSDIODE GEN PURP 160V 1A A SQ-MELF Microchip Technology |
3,592 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 160 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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1N5804URSDIODE GEN PURP 110V 1A A SQ-MELF Microchip Technology |
4,465 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 110 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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1N6701US/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
3,548 |
|
![]() Tabla de datos |
- | SQ-MELF, C | Tape & Reel (TR) | Active | Schottky | 30 V | 5A | 470 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | - | - | Surface Mount | D-5C | -65°C ~ 125°C |