Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANHCB2N5416BJT TRANSISTOR Microchip Technology |
2,056 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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UES1305/TRDIODE GP REV 300V 3A B AXIAL Microchip Technology |
4,419 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 300 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
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1N6700USDIODE SCHOTTKY 20V 5A D-5C Microchip Technology |
2,939 |
|
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- | SQ-MELF, C | Bulk | Active | Schottky | 20 V | 5A | 470 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | - | - | - | Surface Mount | D-5C | -65°C ~ 125°C |
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1N3649DIODE GEN PURP 800V DO203AA Microchip Technology |
3,683 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 800 V | - | 2.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | - | - | Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
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1N3649RDIODE GEN PURP 800V DO203AA Microchip Technology |
3,821 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | - | 2.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | - | - | Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
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1N3650DIODE GEN PURP DO203AA Microchip Technology |
3,054 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1000 V | 3.3A | 2.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | - | - | - | Stud Mount | DO-203AA (DO-4) | - |
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1N3650RDIODE GEN PURP DO203AA Microchip Technology |
4,808 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 3.3A | 2.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | - | - | - | Stud Mount | DO-203AA (DO-4) | - |
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1N5331DIODE GEN PURP 1.4KV 22A DO4 Microchip Technology |
2,960 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1400 V | 22A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1400 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 200°C |
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JAN1N5712UBDIODE SCHOTTKY UB Microchip Technology |
4,170 |
|
- |
- | 4-SMD, No Lead | Bulk | Active | Schottky | - | - | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | - | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | UB | 150°C (Max) |
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UES1302/TRDIODE GEN PURP 100V 6A AXIAL Microchip Technology |
3,969 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | 100 V | 6A | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | - | - | - | Through Hole | Axial | -55°C ~ 175°C |