Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
JAN1N5195/TRDIODE GEN PURP 180V 200MA DO35 Microchip Technology |
3,599 |
|
- |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 180 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 200 V | - | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JAN1N5195DIODE GEN PURP 180V 200MA DO35 Microchip Technology |
2,034 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 180 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 200 V | - | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
![]() |
1N6701USDIODE SCHOTTKY 30V 5A D-5C Microchip Technology |
3,376 |
|
![]() Tabla de datos |
- | SQ-MELF, C | Bulk | Active | Schottky | 30 V | 5A | 470 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | - | - | Surface Mount | D-5C | -65°C ~ 125°C |
![]() |
1N6702US/TRDIODE SCHOTTKY 40V 5A D-5C Microchip Technology |
4,418 |
|
- |
- | SQ-MELF, C | Tape & Reel (TR) | Active | Schottky | 40 V | 5A | 470 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | - | - | Surface Mount | D-5C | -65°C ~ 125°C |
![]() |
1N6702USDIODE SCHOTTKY 40V 5A D-5C Microchip Technology |
2,841 |
|
- |
- | SQ-MELF, C | Bulk | Active | Schottky | 40 V | 5A | 470 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | - | - | Surface Mount | D-5C | -65°C ~ 125°C |
![]() |
UES1305E3DIODE GEN PURP 300V 3A B AXIAL Microchip Technology |
3,406 |
|
- |
- | B, Axial | Bulk | Active | Standard | 300 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
![]() |
UES1305DIODE GEN PURP 300V 3A AXIAL Microchip Technology |
2,265 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 300 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
![]() |
UES1303/TRDIODE GEN PURP 150V 6A Microchip Technology |
3,889 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 6A | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | - | - | Through Hole | B, Axial | 175°C (Max) |
![]() |
UES1305E3/TRDIODE GP REV 300V 3A B AXIAL Microchip Technology |
4,160 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 300 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
![]() |
JANHCB2N5415BJT TRANSISTOR Microchip Technology |
4,522 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |